參數(shù)資料
型號(hào): ST3230C16R0
英文描述: Stratix II GX FPGA 30K FPGA-780
中文描述: 1600V 2785A可控硅相位控制在阿- 36(注冊(cè)商標(biāo),北辰)封裝
文件頁數(shù): 2/6頁
文件大?。?/td> 79K
代理商: ST3230C16R0
ST3230C..R Series
2
Bulletin I25200 rev. B 04/00
www.irf.com
Voltage
Code
V
DRM
/V
RRM
, max. repetitive
peak and off-state voltage
V
1000
V
RSM
, maximum non-
repetitive peak voltage
V
1100
I
DRM
/I
RRM
max.
@ T
C
= 125
°
C
mA
Type number
10
12
14
16
18
1200
1400
1600
1800
1300
1500
1700
1900
ELECTRICAL SPECIFICATIONS
Voltage Ratings
I
T(AV)
Max. average on-state current
2785 (1720)
A
@ Case temperature
80
°
C
I
T(AV)
Max. average on-state current
@ Heatsink temperature
3360 (1360)
A
55 (85)
°
C
I
T(RMS)
Max. RMS on-state current
I
TSM
Max. peak, one-cycle
non-repetitive surge current
5970
A
DC @ 25
°
C heatsink temperature double side cooled
No voltage
reapplied
50% V
RRM
reapplied
No voltage
reapplied
50% V
RRM
reapplied
Sinusoidal half wave,
Initial T
C
= 125
°
C
I
2
t
Maximum I
2
t for fusing
V
T(TO)
Max. value of threshold voltage
r
t
resistance
0.92
V
T
J
= T
J
max.
Max. value of on-state slope
V
TM
Max. on-state voltage
1.3
V
I
pk
= 2900A, T
C
= 25
°
C
T
J
= 25
°
C, V
D
=
5V
I
L
Typical latching current
300
mA
Parameter
ST3230C..R
Units
Conditions
On-state Conduction
A
KA
2
s
0.09
T
J
= T
J
max.
m
180
°
conduction, half sine wave
double side (single side [anode side]) cooled
Parameter
ST3230C..R
Units Conditions
di/dt
Max. repetitive 50Hz (no repetitive)
rate of rise of turned-on current
From 67% V
DRM
to 1000A gate drive 10V, 5
, t
r
=
0.5μs
to 1A, T
J
= T
J
max.
Gate drive 30V, 15
,
V
d
= 67% V
DRM
,
T
J
= 25
°
C
Rise time 0.5μs
I
T
= 1000A, t
p
= 1ms, T
J
= T
J
max, V
RM
= 50V,
dI
RR
/dt = 2A/μs, V
DR
=
67% V
DRM
,
dv
DR
/dt
= 8V/μs linear
150 (300)
A/μs
μs
t
q
Typical turn-off time
500
t
d
Maximum delay time
4.5
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
61200
64000
49000
51300
18730
17000
12000
10920
ST3230C..R
250
Switching
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