參數(shù)資料
型號(hào): ST25C02B5TR
廠商: 意法半導(dǎo)體
英文描述: MOSFET, N, SO-8; Transistor type:MOSFET; Current, Id cont:4A; Resistance, Rds on:6.7R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak; Charge, gate n-channel:36nC; Current, Idm pulse:50A; Depth, external:5.26mm; Length RoHS Compliant: Yes
中文描述: 串行2K(256 × 8)的EEPROM
文件頁(yè)數(shù): 14/16頁(yè)
文件大?。?/td> 145K
代理商: ST25C02B5TR
PSDIP-a
A2
A1
A
L
e1
D
E1
E
N
1
C
eA
eB
B1
B
Symb
mm
inches
Typ
Min
Max
Typ
Min
Max
A
3.90
5.90
0.154
0.232
A1
0.49
0.019
A2
3.30
5.30
0.130
0.209
B
0.36
0.56
0.014
0.022
B1
1.15
1.65
0.045
0.065
C
0.20
0.36
0.008
0.014
D
9.20
9.90
0.362
0.390
E
7.62
0.300
E1
6.00
6.70
0.236
0.264
e1
2.54
0.100
eA
7.80
0.307
eB
10.00
0.394
L
3.00
3.80
0.118
0.150
N
8
8
PSDIP8
Drawing is not to scale
PSDIP8 - 8 pin Plastic Skinny DIP, 0.25mm lead frame
14/16
ST24/25C02, ST24C02R, ST24/25W02
相關(guān)PDF資料
PDF描述
ST25C02M1TR MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:150V; Continuous Drain Current, Id:4A; On-Resistance, Rds(on):50mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC; Leaded Process Compatible:No
ST25C02M5TR SERIAL 2K (256 x 8) EEPROM
ST25C02M6TR MOSFET, N SO-8MOSFET, N SO-8; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:40V; Case style:SO-8; Current, Id cont:10.4A; Current, Idm pulse:50A; Power, Pd:1.83W; Resistance, Rds on:0.0075R; SMD:1; Charge, gate
ST24W02B1 Cyclone II FPGA 50K FBGA-672
ST24W02B3 Cyclone II FPGA 5K FBGA-256
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