參數(shù)資料
型號(hào): ST25C02B5TR
廠商: 意法半導(dǎo)體
英文描述: MOSFET, N, SO-8; Transistor type:MOSFET; Current, Id cont:4A; Resistance, Rds on:6.7R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak; Charge, gate n-channel:36nC; Current, Idm pulse:50A; Depth, external:5.26mm; Length RoHS Compliant: Yes
中文描述: 串行2K(256 × 8)的EEPROM
文件頁(yè)數(shù): 11/16頁(yè)
文件大?。?/td> 145K
代理商: ST25C02B5TR
S
S
BYTE WRITE
DEV SEL
BYTE ADDR
DATA IN
WC
S
PAGE WRITE
DEV SEL
BYTE ADDR
DATA IN 1
WC
DATA IN 2
AI01101B
PAGE WRITE
(cont'd)
WC (cont'd)
S
DATA IN N
ACK
ACK
ACK
R/W
ACK
ACK
ACK
R/W
ACK
ACK
Figure 9. Write Modes Sequence with Write Control = 1 (ST24/25W02)
Sequential Read.
This mode can be initiated with
either a Current Address Read or a Random Ad-
dress Read. However, in this case the master
DOES acknowledge the data byte output and the
memory continues to output the next byte in se-
quence. To terminate the stream of bytes, the
master must NOT acknowledge the last byte out-
put, but MUST generate a STOP condition. The
output data is from consecutive byte addresses,
with the internal byte address counter automat-
ically incremented after each byte output. After a
count of the last memory address, the address
counter will ’roll- over’ and the memory will continue
to output data.
Acknowledge in Read Mode.
In all read modes
the ST24/25x02 wait for an acknowledge during the
9th bit time. If the master does not pull the SDA line
low during this time, the ST24/25x02 terminate the
data transfer and switches to a standby state.
11/16
ST24/25C02, ST24C02R, ST24/25W02
相關(guān)PDF資料
PDF描述
ST25C02M1TR MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:150V; Continuous Drain Current, Id:4A; On-Resistance, Rds(on):50mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC; Leaded Process Compatible:No
ST25C02M5TR SERIAL 2K (256 x 8) EEPROM
ST25C02M6TR MOSFET, N SO-8MOSFET, N SO-8; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:40V; Case style:SO-8; Current, Id cont:10.4A; Current, Idm pulse:50A; Power, Pd:1.83W; Resistance, Rds on:0.0075R; SMD:1; Charge, gate
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