參數(shù)資料
型號: SST89V54RD-33-C-PIE
廠商: Microchip Technology
文件頁數(shù): 74/92頁
文件大?。?/td> 0K
描述: IC MCU 8BIT 24KB FLASH 40PDIP
標(biāo)準(zhǔn)包裝: 9
系列: FlashFlex®
核心處理器: 8051
芯體尺寸: 8-位
速度: 33MHz
連通性: EBI/EMI,SPI,UART/USART
外圍設(shè)備: 欠壓檢測/復(fù)位,POR,WDT
輸入/輸出數(shù): 32
程序存儲器容量: 16KB(16K x 8)
程序存儲器類型: 閃存
EEPROM 大?。?/td> 8K x 8
RAM 容量: 1K x 8
電壓 - 電源 (Vcc/Vdd): 2.7 V ~ 3.6 V
振蕩器型: 外部
工作溫度: 0°C ~ 70°C
封裝/外殼: 40-DIP(0.600",15.24mm)
包裝: 管件
2011 Silicon Storage Technology, Inc.
DS25087A
10/11
76
FlashFlex MCU
SST89V54RD2/RD / SST89V58RD2/RD
Not Recommended for New Designs
A Microchip Technology Company
Table 31: Reliability Characteristics
Symbol
Parameter
Minimum Specification
Units
Test Method
NEND1
Endurance
10,000
Cycles
JEDEC Standard A117
TDR1
Data Retention
100
Years
JEDEC Standard A103
ILTH1
Latch Up
100 + IDD
mA
JEDEC Standard 78
T0-0.0 25087
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
Table 32: AC Conditions of Test1
1. See Figures 40 and 42
Input Rise/Fall Time
Output Load
10 ns
CL = 100 pF
T32.1 25087
Table 33: Recommended System Power-up Timings
Symbol
Parameter
Minimum
Units
TPU-READ1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter
Power-up to Read Operation
100
s
TPU-WRITE1
Power-up to Write Operation
100
s
T0-0.0 25087
Table 34: Pin Impedance (VDD=3.3V, TA=25 °C, f=1 Mhz, other pins open)
Parameter
Description
Test Condition
Maximum
CI/O1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
I/O Pin Capacitance
VI/O = 0V
15 pF
CIN1
Input Capacitance
VIN = 0V
12 pF
LPIN2
2. Refer to PCI spec.
Pin Inductance
20 nH
T0-0.0 25087
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