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參數(shù)資料
| 型號： | SST49LF040-33-4C-NH |
| 廠商： | SILICON STORAGE TECHNOLOGY INC |
| 元件分類： | PROM |
| 英文描述： | 4 Mbit LPC Flash |
| 中文描述： | 512K X 8 FLASH 3V PROM, 11 ns, PQCC32 |
| 封裝： | PLASTIC, LCC-32 |
| 文件頁數(shù)： | 9/48頁 |
| 文件大?。?/td> | 724K |
| 代理商： | SST49LF040-33-4C-NH |
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Advance Information
4 Mbit LPC Flash
SST49LF040
9
2001 Silicon Storage Technology, Inc.
S71213-00-000
11/01 562
MODE SELECTION
The SST49LF040 flash memory devices can operate in
two distinct interface modes: the LPC mode and the Paral-
lel Programming (PP) mode. The mode pin is used to set
the interface mode selection. If the mode pin is set to logic
High, the device is in PP mode; while if the mode pin is set
Low, the device is in the LPC mode. The mode selection
pin must be configured prior to device operation. The mode
pin is internally pulled down if the pin is left unconnected. In
LPC mode, the device is configured to its host using stan-
dard LPC interface protocol. Communication between Host
and the SST49LF040 occurs via the 4-bit I/O communica-
tion signals, LAD [3:0] and LFRAME#. In PP mode, the
device is programmed via an 11-bit address and an 8-bit
data I/O parallel signals. The address inputs are multi-
plexed in row and column selected by control signal R/C#
pin. The row addresses are mapped to the higher internal
addresses, and the column addresses are mapped to the
lower internal addresses. See Figure 1, the Device Mem-
ory Map, for address assignments.
LPC MODE
CE#
The CE# pin, enables and disables the SST49LF040, con-
trolling Read and Write access of the device. To enable the
SST49LF040, the CE# pin must be driven low one clock
cycle prior to LFRAME# being driven low. CE# must
remain active low during internal Write (Erase or Program)
operations. The device will enter the Standby mode when
internal Write operations are completed and CE# is high.
LFRAME#
The LFRAME# signifies the start of a frame or the termina-
tion of a broken frame. Asserting LFRAME# for one or
more clock cycle and driving a valid START value on
LAD[3:0] will initiate device operation. The device will enter
the Standby mode when internal operations are completed
and LFRAME# is high.
Device Memory Hardware Write Protection
The Top Boot Lock (TBL#) and Write Protect (WP#) pins
are provided for hardware write protection of device mem-
ory in the SST49LF040. The TBL# pin is used to write pro-
tect 16 boot sectors (64 KByte) at the highest memory
address range for the SST49LF040. WP# pin write pro-
tects the remaining sectors in the flash memory.
An active low signal at the TBL# pin prevents Program and
Erase operations of the top boot sectors. When TBL# pin is
held high, the write protection of the top boot sectors is dis-
abled. The WP# pin serves the same function for the
remaining sectors of the device memory. The TBL# and
WP# pins write protection functions operate independently
of one another.
Both TBL# and WP# pins must be set to their required pro-
tection states prior to starting a Program or Erase opera-
tion. A logic level change occurring at the TBL# or WP# pin
during a Program or Erase operation could cause unpre-
dictable results.
Reset
A V
IL
on INIT# or RST# pin initiates a device reset. INIT#
and RST# pins have the same function internally. It is
required to drive INIT# or RST# pins low during a system
reset to ensure proper CPU initialization. During a Read
operation, driving INIT# or RST# pins low deselects the
device and places the output drivers, LAD[3:0], in a high-
impedance state. The reset signal must be held low for a
minimal duration of time T
RSTP
. A reset latency will occur if
a reset procedure is performed during a Program or Erase
operation. See Table 14, Reset Timing Parameters, for
more information. A device reset during an active Program
or Erase will abort the operation and memory contents may
become invalid due to data being altered or corrupted from
an incomplete Erase or Program operation.
Device Operation
The LPC mode uses a 5-signal communication interface, a
4-bit address/data bus, LAD[3:0], and a control line,
LFRAME#, to control operations of the SST49LF040.
Cycle type operations such as Memory Read and Memory
Write are defined in Intel Low Pin Count Interface Specifi-
cation, Revision 1.0. JEDEC Standard SDP (Software
Data Protection) Program and Erase commands
sequences are incorporated into the standard LPC mem-
ory cycles. See Figure 12 through Figure 17 timing dia-
grams for command sequences.
LPC signals are transmitted via the 4-bit Address/Data bus
(LAD[3:0]), and follow a particular sequence, depending on
whether they are Read or Write operations. The standard
LPC memory cycle is defined in Table 18.
Both LPC Read and Write operations start in a similar way
as shown in Figures 10 and 11 timing diagrams. The host
(which is the term used here to describe the device driving
相關(guān)PDF資料 |
PDF描述 |
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| SST49LF040-33-4C-WH | 4 Mbit LPC Flash |
| SST49LF080A | 8 Mbit LPC Flash |
| SST49LF080A-33-4C-NH | 8 Mbit LPC Flash |
| SST49LF080A-33-4C-WH | 8 Mbit LPC Flash |
| SST502 | Current Regulator Diode(穩(wěn)壓電流為0.43mA的電流穩(wěn)壓二極管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SST49LF040-33-4C-WH | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:4 Mbit LPC Flash |
| SST49LF040B | 制造商:TYAN 功能描述:TYAN BIOS CHIP, S2882-D - Bulk |
| SST49LF040B-33-4C-NHE | 功能描述:閃存 512Kx8 (4Mbit) 33ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST49LF080A | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:8 Mbit LPC Flash |
| SST49LF080A_06 | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:8 Mbit LPC Flash |
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