- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄365726 > SST4416 (Vishay Intertechnology,Inc.) N-Channel JFET(最小柵源擊穿電壓-30V，最小飽和漏極電流5mA的N溝道結(jié)型場效應(yīng)管) PDF資料下載
參數(shù)資料
| 型號： | SST4416 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel JFET(最小柵源擊穿電壓-30V，最小飽和漏極電流5mA的N溝道結(jié)型場效應(yīng)管) |
| 中文描述： | N溝道場效應(yīng)（最小柵源擊穿電壓- 30V的，最小飽和漏極電流5mA的的N溝道結(jié)型場效應(yīng)管） |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 76K |
| 代理商： | SST4416 |
2N4416/2N4416A/SST4416
Siliconix
S-52424—Rev. E, 14-Apr-97
3
High-Frequency Specifications
a, b
for 2N4416 and 2N4416A
Limits
100 MHz
400 MHz
Parameter
Symbol
Test Conditions
Min
Max
Min
Max
Unit
Common Source Input Conductance
Common Source Input Susceptance
Common Source Output Conductance
Common Source Output Susceptance
Common Source Forward Transconductance
Common-Source Power Gain
Noise Figure
g
iss
b
iss
g
oss
b
oss
g
fs
G
ps
NF
100
2,500
75
1,000
1,000
10,000
100
4,000
V
DS
= 15 V, V
GS
= 0 V
S
4,000
10
V
DS
= 15 V, I
D
= 5 mA
18
dB
R
G
= 1 k
2
4
Notes
a.
b.
c.
d.
T
A
= 25 C unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Pulse test: PW
300 s duty cycle
3%.
This parameter not registered with JEDEC.
NH
Typical Characteristics
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
20
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
r
DS
g
os
r
DS
@ I
D
= 1 mA, V
GS
= 0 V
g
os
@ V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
–
I
D
g
f
I
DSS
g
fs
I
DSS
@ V
DS
= 10 V, V
GS
= 0 V
g
fs
@ V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
V
GS(off)
– Gate-Source Cutoff Voltage (V)
Output Characteristics
10
8
0
6
4
2
0
16
12
8
4
0
–10
–2
–4
–6
–8
100
80
0
60
40
20
500
0
400
300
200
100
0
–10
–2
–4
–6
–8
V
DS
– Drain-Source Voltage (V)
V
DS
– Drain-Source Voltage (V)
Output Characteristics
–
I
D
–
I
D
10
0
8
6
4
2
0
10
2
4
6
8
15
0
12
9
6
3
0
10
2
4
6
8
V
GS(off)
= –2 V
V
GS(off)
= –3 V
–0.2 V
–0.4 V
–0.6 V
–0.8 V
–1.0 V
–1.2 V
V
GS
= 0 V
–0.6 V
–0.9 V
–1.2 V
–1.5 V
–1.8 V
V
GS
= 0 V
–0.3 V
V
GS(off)
– Gate-Source Cutoff Voltage (V)
r
D
–
)
S
g
f
–1.4 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SST441 | Monolithic Dual N-Channel JFET(最小柵源擊穿電壓-25V，柵極工作電流-1pA的雙N溝道結(jié)型場效應(yīng)管) |
| SST45VF010 | 4 Mbit Uniform Sector, Serial Flash Memory |
| SST45VF010-10-4C-SA | 4 Mbit Uniform Sector, Serial Flash Memory |
| SST45LF010 | 4 Mbit Uniform Sector, Serial Flash Memory |
| SST45LF010-10-4C-QA | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SST4416_SOT-23 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:N-Channel high frequency JFET amplifier |
| SST4416A_SOT-23 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:N-Channel high frequency JFET amplifier |
| SST4416-E3 | 功能描述:JFET 36V 5mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| SST4416-E3 | 制造商:Vishay Siliconix 功能描述:JFET |
| SST4416-T1 | 功能描述:JFET 36V 5mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。