參數(shù)資料
型號： SST4119
廠商： Vishay Intertechnology,Inc.
英文描述： MOSFET, DUAL, NN, SO-8; Transistor type:MOSFET; Current, Id cont:4.5A; Resistance, Rds on:0.035R; Voltage, Vgs Rds on measurement:4.5V; Case style:SO-8 (SOIC-8); Charge, gate n-channel:8.6nC; Current, Idm pulse:40A; Pins, No. of:8; RoHS Compliant: Yes
中文描述： N溝道JFET的
文件頁數(shù)： 2/5頁
文件大?。?/td> 61K
代理商： SST4119
2N/PN/SST4117A Series
Vishay Siliconix
www.vishay.com
2
Document Number: 70239
S-41231—Rev. G, 28-Jun-04
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage
Forward Gate Current
Storage Temperature :
40V
50 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(2N Prefix)
. . . . . . . . . . . . . . . . . . .
(PN, SST Prefix)
Operating Junction Temperature :
(2N Prefix)
(PN, SST Prefix)
65 to 175 C
55 to 150 C
. . . . . . . . . . . . .
55 to 175 C
55 to 150 C
. . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . .
Lead Temperature (
1
/
16
” from case for 10 sec.)
Power Dissipation (case 25 C) :
300 C
. . . . . . . . . . . . . . . . . . .
(2N Prefix)
a
(PN, SST Prefix)
b
300 mW
350 mW
. . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . .
Notes
a.
b.
Derate 2 mW/ C above 25 C
Derate 2.8 mW/ C above 25 C
SPECIFICATIONS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Limits
4117
4118
4119
Parameter
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
V
(BR)GSS
I
G
=
1 A , V
DS
= 0 V
70
40
40
40
V
Gate-Source Cutoff Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 nA
0.6
1.8
1
3
2
6
Saturation Drain Current
I
DSS
V
DS
= 10 V, V
GS
= 0 V
V
GS
=
20 V
V
DS
= 0 V
V
GS
=
20 V
V
DS
= 0 V
T
A
= 150 C
30
90
80
240
200
600
A
0.2
1
1
1
pA
G t R
Gate Reverse Current
I
GSS
2N
0.4
2.5
2.5
2.5
nA
V
GS
=
10 V
V
DS
= 0 V
PN
0.2
1
1
1
pA
SST
0.2
10
10
10
V
GS
=
10 V
V
= 0 V
T
A
= 100 C
V
DG
= 15 V, I
D
= 30 A
V
DS
= 10 V, V
GS
=
8 V
I
G
= 1 mA , V
DS
= 0 V
PN/SST
0.03
2.5
2.5
2.5
nA
Gate Operating Current
b
Drain Cutoff Current
b
Gate-Source Forward Voltage
b
I
G
0.2
pA
I
D(off)
V
GS(F)
0.2
0.7
V
Dynamic
Common-Source
Forward Transconductance
g
fs
V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
70
210
80
250
100
330
S
Common-Source
Output Conductance
g
os
3
5
10
Common-Source
Input Capacitance
C
iss
2N/PN
1.2
3
3
3
V
DS
= 10 V
V
= 0 V
f = 1 MHz
SST
1.2
pF
Common-Source
Reverse Transfer Capacitance
C
rss
2N/PN
0.3
1.5
1.5
1.5
SST
0.3
Equivalent Input Noise Voltage
b
e
n
V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
15
nV
√
Hz
Notes
a.
b.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
This parameter not registered with JEDEC.
NT
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