參數(shù)資料
型號(hào)： SST39WF400A-100-4I-C1Q
廠商： SILICON STORAGE TECHNOLOGY INC
元件分類： PROM
英文描述： 64 Mbit (x16) Multi-Purpose Flash Plus
中文描述： 256K X 16 FLASH 1.8V PROM, 100 ns, PBGA48
封裝： 4 X 6 MM, 0.50 MM PITCH, MO-222, XFLGA-48
文件頁(yè)數(shù)： 2/26頁(yè)
文件大?。?/td> 374K
代理商： SST39WF400A-100-4I-C1Q
2
Data Sheet
4 Mbit Multi-Purpose Flash
SST39WF400A
2004 Silicon Storage Technology, Inc.
S71220-05-000
6/04
Device Operation
Commands are used to initiate the memory operation func-
tions of the device. Commands are written to the device
using standard microprocessor write sequences. A com-
mand is written by asserting WE# low while keeping CE#
low. The address bus is latched on the falling edge of WE#
or CE#, whichever occurs last. The data bus is latched on
the rising edge of WE# or CE#, whichever occurs first.
Read
The Read operation of the SST39WF400A is controlled by
CE# and OE#, both have to be low for the system to obtain
data from the outputs. CE# is used for device selection.
When CE# is high, the chip is deselected and only standby
power is consumed. OE# is the output control and is used
to gate data from the output pins. The data bus is in high
impedance state when either CE# or OE# is high. Refer to
the Read cycle timing diagram for further details (Figure 3).
Word-Program Operation
The SST39WF400A is programmed on a word-by-word
basis. Before programming, the sector where the word
exists must be fully erased. The Program operation is
accomplished in three steps. The first step is the three-byte
load sequence for Software Data Protection. The second
step is to load word address and word data. During the
Word-Program operation, the addresses are latched on the
falling edge of either CE# or WE#, whichever occurs last.
The data is latched on the rising edge of either CE# or
WE#, whichever occurs first. The third step is the internal
Program operation which is initiated after the rising edge of
the fourth WE# or CE#, whichever occurs first. The Pro-
gram operation, once initiated, will be completed within 40
μs. See Figures 4 and 5 for WE# and CE# controlled Pro-
gram operation timing diagrams and Figure 16 for flow-
charts. During the Program operation, the only valid reads
are Data# Polling and Toggle Bit. During the internal Pro-
gram operation, the host is free to perform additional tasks.
Any commands issued during the internal Program opera-
tion are ignored.
Sector/Block-Erase Operation
The Sector- (or Block-) Erase operation allows the system
to erase the device on a sector-by-sector (or block-by-
block) basis. The SST39WF400A offers both Sector-Erase
and Block-Erase mode. The sector architecture is based
on uniform sector size of 2 KWord. The Block-Erase mode
is based on uniform block size of 32 KWord. The Sector-
Erase operation is initiated by executing a six-byte com-
mand sequence with Sector-Erase command (30H) and
sector address (SA) in the last bus cycle. The Block-Erase
operation is initiated by executing a six-byte command
sequence with Block-Erase command (50H) and block
address (BA) in the last bus cycle. The sector or block
address is latched on the falling edge of the sixth WE#
pulse, while the command (30H or 50H) is latched on the
rising edge of the sixth WE# pulse. The internal Erase
operation begins after the sixth WE# pulse. The End-of-
Erase operation can be determined using either Data#
Polling or Toggle Bit methods. See Figures 9 and 10 for tim-
ing waveforms. Any commands issued during the Sector-
or Block-Erase operation are ignored.
Chip-Erase Operation
The SST39WF400A provides a Chip-Erase operation,
which allows the user to erase the entire memory array to
the “1” state. This is useful when the entire device must be
quickly erased.
The Chip-Erase operation is initiated by executing a six-
byte command sequence with Chip-Erase command (10H)
at address 5555H in the last byte sequence. The Erase
operation begins with the rising edge of the sixth WE# or
CE#, whichever occurs first. During the Erase operation,
the only valid read is Toggle Bit or Data# Polling. See Table
4 for the command sequence, Figure 8 for timing diagram,
and Figure 19 for the flowchart. Any commands issued dur-
ing the Chip-Erase operation are ignored.
Write Operation Status Detection
The SST39WF400A provides two software means to
detect the completion of a write (Program or Erase) cycle,
in order to optimize the system write cycle time. The soft-
ware detection includes two status bits: Data# Polling
(DQ
7
) and Toggle Bit (DQ
6
). The End-of-Write detection
mode is enabled after the rising edge of WE#, which ini-
tiates the internal Program or Erase operation.
The actual completion of the nonvolatile Write is asynchro-
nous with the system; therefore, either a Data# Polling or
Toggle Bit read may be simultaneous with the completion
of the Write cycle. If this occurs, the system may possibly
get an erroneous result, i.e., valid data may appear to con-
flict with either DQ
7
or DQ
6
. In order to prevent spurious
rejection, if an erroneous result occurs, the software routine
should include a loop to read the accessed location an
additional two (2) times. If both Reads are valid, then the
device has completed the Write cycle, otherwise the rejec-
tion is valid.
相關(guān)PDF資料
PDF描述
SST39WF400A-100-4I-C1QE 64 Mbit (x16) Multi-Purpose Flash Plus
SST39WF400A-100-4I-M1Q 64 Mbit (x16) Multi-Purpose Flash Plus
SST39WF400A-100-4I-M1QE 64 Mbit (x16) Multi-Purpose Flash Plus
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SST39WF400A-90-4C-B3KE 64 Mbit (x16) Multi-Purpose Flash Plus
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SST39WF400A-90-4C-B3KE 功能描述:閃存 4M (256Kx16) 90ns 1.65-1.95V Comm RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST39WF400A-90-4C-B3KE-T 功能描述:閃存 1.65 to 1.95V 4Mbit Multi-Purpose 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST39WF400A-90-4C-C1QE 功能描述:閃存 4M (256Kx16) 90ns 1.65-1.95V Comm RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST39WF400A-90-4C-M1Q 功能描述:閃存 256K X 16 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST39WF400A-90-4C-M1QE 功能描述:閃存 256K X 16 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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