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| 型號(hào)： | SST39WF400A-100-4I-C1Q |
| 廠商： | SILICON STORAGE TECHNOLOGY INC |
| 元件分類： | PROM |
| 英文描述： | 64 Mbit (x16) Multi-Purpose Flash Plus |
| 中文描述： | 256K X 16 FLASH 1.8V PROM, 100 ns, PBGA48 |
| 封裝： | 4 X 6 MM, 0.50 MM PITCH, MO-222, XFLGA-48 |
| 文件頁(yè)數(shù)： | 10/26頁(yè) |
| 文件大?。?/td> | 374K |
| 代理商： | SST39WF400A-100-4I-C1Q |
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10
Data Sheet
4 Mbit Multi-Purpose Flash
SST39WF400A
2004 Silicon Storage Technology, Inc.
S71220-05-000
6/04
TABLE
8: DC O
PERATING
C
HARACTERISTICS
V
DD
= 1.65-1.95V
1
Symbol
I
DD
Parameter
Power Supply Current
Limits
Max
Test Conditions
Address input=V
ILT
/V
IHT,
at f=5 MHz,
V
DD
=V
DD
Max
CE#=V
IL
, OE#=WE#=V
IH
, all I/Os open
CE#=WE#=V
IL
, OE#=V
IH
CE#=V
DD
, V
DD
=V
DD
Max
V
IN
=GND to V
DD
, V
DD
=V
DD
Max
V
OUT
=GND to V
DD
, V
DD
=V
DD
Max
V
DD
=V
DD
Min
V
DD
=V
DD
Max
I
OL
=100 μA, V
DD
=V
DD
Min
I
OH
=-100 μA, V
DD
=V
DD
Min
Min
Units
Read
Program and Erase
Standby V
DD
Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
15
20
5
2
1
1
mA
mA
μA
μA
μA
I
SB
I
LI
I
LO
V
IL
V
IH
V
OL
V
OH
0.2V
DD
0.8V
DD
V
V
V
0.1
V
DD
-0.1
T8.2 1220
1. Typical conditions for the Active Current shown on the front page of the data sheet are average values at 25°C
(room temperature), and V
DD
= 1.8V. Not 100% tested.
2. 5 μA is the maximum I
SB
for all 39WF400A commercial grade devices. 20 μA is the maximum I
SB
for all 39WF400A industrial grade
devices. For all 39WF400A commercial and industrial devices, I
SB
typical is 1 μA.
TABLE
9: R
ECOMMENDED
S
YSTEM
P
OWER
-
UP
T
IMINGS
Symbol
T
PU-READ1
T
PU-WRITE1
Parameter
Power-up to Read Operation
Power-up to Program/Erase Operation
Minimum
100
100
Units
μs
μs
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
T9.0 1220
TABLE 10: C
APACITANCE
(Ta = 25°C, f=1 MHz, other pins open)
Parameter
C
I/O1
C
IN1
Description
I/O Pin Capacitance
Input Capacitance
Test Condition
V
I/O
= 0V
V
IN
= 0V
Maximum
12 pF
6 pF
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
T10.0 1220
TABLE 11: R
ELIABILITY
C
HARACTERISTICS
Symbol
N
END1,2
T
DR1
I
LTH1
Parameter
Endurance
Data Retention
Latch Up
Minimum Specification
10,000
100
100 + I
DD
Units
Cycles
Years
mA
Test Method
JEDEC Standard A117
JEDEC Standard A103
JEDEC Standard 78
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
2. N
END
endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would result in a
higher minimum specification.
T11.0 1220
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SST39WF400A-90-4C-B3KE | 功能描述:閃存 4M (256Kx16) 90ns 1.65-1.95V Comm RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39WF400A-90-4C-B3KE-T | 功能描述:閃存 1.65 to 1.95V 4Mbit Multi-Purpose 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39WF400A-90-4C-C1QE | 功能描述:閃存 4M (256Kx16) 90ns 1.65-1.95V Comm RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39WF400A-90-4C-M1Q | 功能描述:閃存 256K X 16 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39WF400A-90-4C-M1QE | 功能描述:閃存 256K X 16 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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