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參數(shù)資料
| 型號： | SST39VF6402B-90-4I-B1K |
| 廠商： | SILICON STORAGE TECHNOLOGY INC |
| 元件分類： | PROM |
| 英文描述： | 64 Mbit (x16) Multi-Purpose Flash Plus |
| 中文描述： | 4M X 16 FLASH 2.7V PROM, 90 ns, PBGA48 |
| 封裝： | 8 X 10 MM, 0.80 MM PITCH, MO-210, TFBGA-48 |
| 文件頁數(shù)： | 10/30頁 |
| 文件大?。?/td> | 369K |
| 代理商： | SST39VF6402B-90-4I-B1K |
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10
Data Sheet
64 Mbit Multi-Purpose Flash Plus
SST39VF6401B / SST39VF6402B
2006 Silicon Storage Technology, Inc.
S71288-02-000
7/06
TABLE
Address
10H
11H
12H
13H
14H
15H
16H
17H
18H
19H
1AH
7: CFI Q
UERY
I
DENTIFICATION
S
TRING
1
FOR
SST39VF640
X
B
Data
Data
0051H
Query Unique ASCII string “QRY”
0052H
0059H
0002H
Primary OEM command set
0000H
0000H
Address for Primary Extended Table
0000H
0000H
Alternate OEM command set (00H = none exists)
0000H
0000H
Address for Alternate OEM extended Table (00H = none exits)
0000H
T7.0 1288
1. Refer to CFI publication 100 for more details.
TABLE
8: S
YSTEM
I
NTERFACE
I
NFORMATION
FOR
SST39VF640
X
B
Address
1BH
Data
0027H
Data
V
DD
Min (Program/Erase)
DQ
7
-DQ
4
: Volts, DQ
3
-DQ
0
: 100 millivolts
V
DD
Max (Program/Erase)
DQ
7
-DQ
4
: Volts, DQ
3
-DQ
0
: 100 millivolts
V
PP
min. (00H = no V
PP
pin)
V
PP
max. (00H = no V
PP
pin)
Typical time out for Word-Program 2
N
μs (2
3
= 8 μs)
Typical time out for min. size buffer program 2
N
μs (00H = not supported)
Typical time out for individual Sector/Block-Erase 2
N
ms (2
4
= 16 ms)
Typical time out for Chip-Erase 2
N
ms (2
5
= 32 ms)
Maximum time out for Word-Program 2
N
times typical (2
1
x 2
3
= 16 μs)
Maximum time out for buffer program 2
N
times typical
Maximum time out for individual Sector/Block-Erase 2
N
times typical (2
1
x 2
4
= 32 ms)
Maximum time out for Chip-Erase 2
N
times typical (2
1
x 2
5
= 64 ms)
1CH
0036H
1DH
1EH
1FH
20H
21H
22H
23H
24H
25H
26H
0000H
0000H
0003H
0000H
0004H
0005H
0001H
0000H
0001H
0001H
T8.0 1288
TABLE
Address
27H
28H
29H
2AH
2BH
2CH
2DH
2EH
2FH
30H
31H
32H
33H
34H
9: D
EVICE
G
EOMETRY
I
NFORMATION
FOR
SST39VF640
X
B
Data
Data
0017H
Device size = 2
N
Bytes (17H = 23; 2
23
= 8 MByte)
0001H
Flash Device Interface description; 0001H = x16-only asynchronous interface
0000H
0000H
Maximum number of bytes in multi-byte write = 2
N
(00H = not supported)
0000H
0002H
Number of Erase Sector/Block sizes supported by device
00FFH
Sector Information (y + 1 = Number of sectors; z x 256B = sector size)
0007H
y = 2047 + 1 = 2048 sectors (07FFH = 2047)
0010H
0000H
z = 16 x 256 Bytes = 4 KBytes/sector (0010H = 16)
007FH
Block Information (y + 1 = Number of blocks; z x 256B = block size)
0000H
y =127 + 1 = 128 blocks (007FH = 127)
0000H
0001H
z = 256 x 256 Bytes = 64 KBytes/block (0100H = 256)
T9.0 1288
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SST39VF800-90-4C-EK | 制造商:SILICON STORAGE TECH 功能描述: 制造商:Silicon Storage Technology (SST) 功能描述: |
| SST39VF800A-70-4A-B3KE | 功能描述:閃存 8M (512Kx16) 70ns Automotive Temp RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39VF800A-70-4A-EKE | 功能描述:閃存 8M (512Kx16) 70ns Automotive Temp RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39VF800A-70-4C-B3K | 功能描述:閃存 512K X 16 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39VF800A-70-4C-B3KE | 功能描述:閃存 512K X 16 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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