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參數(shù)資料
| 型號： | SST39VF320-70-4I-B3KE |
| 廠商： | SILICON STORAGE TECHNOLOGY INC |
| 元件分類： | PROM |
| 英文描述： | 64 Mbit (x16) Multi-Purpose Flash Plus |
| 中文描述： | 2M X 16 FLASH 2.7V PROM, 70 ns, PBGA48 |
| 封裝： | 6 X 8 MM, 0.80 MM PITCH, LEAD FREE, MO-210AB-1, TFBGA-48 |
| 文件頁數(shù)： | 9/24頁 |
| 文件大?。?/td> | 302K |
| 代理商： | SST39VF320-70-4I-B3KE |
Preliminary Specifications
32 Mbit Multi-Purpose Flash
SST39VF320
9
2003 Silicon Storage Technology, Inc.
S71143-02-000
11/03
TABLE
8: DC O
PERATING
C
HARACTERISTICS
V
DD
= 2.7-3.6V
1
Symbol
I
DD
Parameter
Power Supply Current
Limits
Max
Test Conditions
Address input=V
ILT
/V
IHT
, at f=5 MHz,
V
DD
=V
DD
Max
CE#=V
IL
, OE#=WE#=V
IH
, all I/Os open
CE#=WE#=V
IL
, OE#=V
IH
CE#=V
IHC
, V
DD
=V
DD
Max
CE#=V
ILC
, V
DD
=V
DD
Max,
all inputs=V
SS
or V
DD
, WE#=V
IHC
V
IN
=GND to V
DD
, V
DD
=V
DD
Max
V
OUT
=GND to V
DD
, V
DD
=V
DD
Max
V
DD
=V
DD
Min
V
DD
=V
DD
Max
V
DD
=V
DD
Max
I
OL
=100 μA, V
DD
=V
DD
Min
I
OH
=-100 μA, V
DD
=V
DD
Min
Min
Units
Read
2
Program and Erase
Standby V
DD
Current
Auto Low Power Current
18
35
20
20
mA
mA
μA
μA
I
SB
I
ALP
I
LI
I
LO
V
IL
V
IH
V
IHC
V
OL
V
OH
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Input High Voltage (CMOS)
Output Low Voltage
Output High Voltage
1
μA
μA
10
0.8
0.7V
DD
V
DD
-0.3
V
V
V
V
0.2
V
DD
-0.2
T8.11 1143
1. Typical conditions for the Active Current shown on the front page of the data sheet are average values at 25°C
(room temperature), and V
DD
= 3.0V. Not 100% tested.
2. The I
DD
current listed is typically less than 2mA/MHz, with OE# at V
IH.
Typical V
DD
is 3.0V.
TABLE
9: R
ECOMMENDED
S
YSTEM
P
OWER
-
UP
T
IMINGS
Symbol
T
PU-READ1
T
PU-WRITE1
Parameter
Power-up to Read Operation
Power-up to Program/Erase Operation
Minimum
100
100
Units
μs
μs
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
T9.0 1143
TABLE 10: C
APACITANCE
(Ta = 25°C, f=1 Mhz, other pins open)
Parameter
C
I/O1
C
IN1
Description
I/O Pin Capacitance
Input Capacitance
Test Condition
V
I/O
= 0V
V
IN
= 0V
Maximum
12 pF
6 pF
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
T10.0 1143
TABLE 11: R
ELIABILITY
C
HARACTERISTICS
Symbol
N
END1,2
T
DR1
I
LTH1
Parameter
Endurance
Data Retention
Latch Up
Minimum Specification
10,000
100
100 + I
DD
Units
Cycles
Years
mA
Test Method
JEDEC Standard A117
JEDEC Standard A103
JEDEC Standard 78
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
2. N
END
endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would result in a
higher minimum specification.
T11.3 1143
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| SST39VF400A-70-4C-B3K | 功能描述:閃存 256K X 16 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39VF400A-70-4C-B3KE | 功能描述:閃存 256K X 16 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39VF400A-70-4C-B3KE-T | 功能描述:閃存 4M (256Kx16) 70ns 2.7-3.6V Commercial RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39VF400A-70-4C-C1QE | 功能描述:閃存 2.7V to 3.6V 4Mb Multi-Purpose 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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