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參數(shù)資料
| 型號： | SST39VF080-70-4I-EIE |
| 廠商： | SILICON STORAGE TECHNOLOGY INC |
| 元件分類： | PROM |
| 英文描述： | 64 Mbit (x16) Multi-Purpose Flash Plus |
| 中文描述： | 1M X 8 FLASH 2.7V PROM, 70 ns, PDSO40 |
| 封裝： | 10 X 20 MM, LEAD FREE, MO-142CD, TSOP1-40 |
| 文件頁數(shù)： | 1/25頁 |
| 文件大?。?/td> | 364K |
| 代理商： | SST39VF080-70-4I-EIE |
EOL Data Sheet
2007 Silicon Storage Technology, Inc.
S71146-07-EOL
1
6/07
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
8 Mbit (x8) Multi-Purpose Flash
SST39LF080 / SST39VF080
FEATURES:
Organized as 1M x8
Single Voltage Read and Write Operations
– 3.0-3.6V for SST39LF080
– 2.7-3.6V for SST39VF080
Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
Low Power Consumption
(typical values at 14 MHz)
– Active Current: 12 mA (typical)
– Standby Current: 4 μA (typical)
– Auto Low Power Mode: 4 μA (typical)
Sector-Erase Capability
– Uniform 4 KByte sectors
Block-Erase Capability
– Uniform 64 KByte blocks
Fast Read Access Time:
– 55 ns for SST39LF080
– 70 and 90 ns for SST39VF080
Latched Address and Data
Fast Erase and Byte-Program:
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Byte-Program Time: 14 μs (typical)
– Chip Rewrite Time:
15 seconds (typical) for SST39LF/VF080
Automatic Write Timing
– Internal V
PP
Generation
End-of-Write Detection
– Toggle Bit
– Data# Polling
CMOS I/O Compatibility
JEDEC Standard
– Flash EEPROM Pinouts and command sets
Packages Available
– 40-lead TSOP (10mm x 20mm)
– 48-ball TFBGA (6mm x 8mm)
PRODUCT DESCRIPTION
The SST39LF/VF080 devices are 1M x8 CMOS Multi-Pur-
pose Flash (MPF) manufactured with SST’s proprietary,
high-performance CMOS SuperFlash technology. The
split-gate cell design and thick-oxide tunneling injector
attain better reliability and manufacturability compared with
alternate approaches. The SST39LF080 write (Program or
Erase) with a 3.0-3.6V power supply. The SST39VF080
write (Program or Erase) with a 2.7-3.6V power supply.
They conform to JEDEC standard pinouts for x8 memories.
Featuring high performance Byte-Program, the SST39LF/
VF080 devices provide a typical Byte-Program time of 14
μsec. The devices use Toggle Bit or Data# Polling to indi-
cate the completion of Program operation. To protect
against inadvertent write, they have on-chip hardware and
Software Data Protection schemes. Designed, manufac-
tured, and tested for a wide spectrum of applications,
these devices are offered with a guaranteed typical
endurance of 10,000 cycles. Data retention is rated at
greater than 100 years.
The SST39LF/VF080 devices are suited for applications
that require convenient and economical updating of pro-
gram, configuration, or data memory. For all system appli-
cations, they significantly improve performance and
reliability, while lowering power consumption. They inher-
ently use less energy during Erase and Program than alter-
native flash technologies. The total energy consumed is a
function of the applied voltage, current, and time of applica-
tion. Since for any given voltage range, the SuperFlash
technology uses less current to program and has a shorter
erase time, the total energy consumed during any Erase or
Program operation is less than alternative flash technolo-
gies. They also improve flexibility while lowering the cost for
program, data, and configuration storage applications.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase
and Program times increase with accumulated Erase/Pro-
gram cycles.
To meet high density, surface mount requirements, the
SST39LF/VF080 are offered in 40-lead TSOP and 48-
ball TFBGA packages. See Figures 1 and 2 for pin
assignments.
SST39LF/VF0803.0 & 2.7V 8Mb (x8) MPF memories
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| SST39VF080-90-4C-EI | 功能描述:閃存 U 804-39VF0807CEI RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39VF088-70-4C-EKE | 功能描述:閃存 1M X 8 FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39VF100-70-4C-B3K | 功能描述:閃存 64K X 16 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39VF100-70-4C-WI | 功能描述:閃存 64K X 16 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39VF100-70-4I-B3K | 功能描述:閃存 64K X 16 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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