參數(shù)資料
型號(hào)： SST39VF1602-70-4C-EKE
廠商： SILICON STORAGE TECHNOLOGY INC
元件分類(lèi)： PROM
英文描述： 64 Mbit (x16) Multi-Purpose Flash Plus
中文描述： 1M X 16 FLASH 2.7V PROM, 70 ns, PDSO48
封裝： 12 X 20 MM, ROHS COMPLIANT, MO-142DD, TSOP1-48
文件頁(yè)數(shù)： 1/32頁(yè)
文件大小： 394K
代理商： SST39VF1602-70-4C-EKE
Data Sheet
2005 Silicon Storage Technology, Inc.
S71223-04-000
1
11/05
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
16 Mbit / 32 Mbit / 64 Mbit (x16) Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
FEATURES:
Organized as 1M x16: SST39VF1601/1602
2M x16: SST39VF3201/3202
4M x16: SST39VF6401/6402
Single Voltage Read and Write Operations
– 2.7-3.6V
Superior Reliability
– Endurance: 100,000 Cycles (Typical)
– Greater than 100 years Data Retention
Low Power Consumption (typical values at 5 MHz)
– Active Current: 9 mA (typical)
– Standby Current: 3 μA (typical)
– Auto Low Power Mode: 3 μA (typical)
Hardware Block-Protection/WP# Input Pin
– Top Block-Protection (top 32 KWord)
for SST39VF1602/3202/6402
– Bottom Block-Protection (bottom 32 KWord)
for SST39VF1601/3201/6401
Sector-Erase Capability
– Uniform 2 KWord sectors
Block-Erase Capability
– Uniform 32 KWord blocks
Chip-Erase Capability
Erase-Suspend/Erase-Resume Capabilities
Hardware Reset Pin (RST#)
Security-ID Feature
– SST: 128 bits; User: 128 bits
Fast Read Access Time:
– 70 ns
– 90 ns
Latched Address and Data
Fast Erase and Word-Program:
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 40 ms (typical)
– Word-Program Time: 7 μs (typical)
Automatic Write Timing
– Internal V
PP
Generation
End-of-Write Detection
– Toggle Bits
– Data# Polling
CMOS I/O Compatibility
JEDEC Standard
– Flash EEPROM Pinouts and command sets
Packages Available
– 48-lead TSOP (12mm x 20mm)
– 48-ball TFBGA (6mm x 8mm) for 16M and 32M
– 48-ball TFBGA (8mm x 10mm) for 64M
All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The SST39VF160x/320x/640x devices are 1M x16, 2M
x16, and 4M x16 respectively, CMOS Multi-Purpose
Flash Plus (MPF+) manufactured with SST’s proprietary,
high performance CMOS SuperFlash technology. The
split-gate cell design and thick-oxide tunneling injector
attain better reliability and manufacturability compared
with alternate approaches. The SST39VF160x/320x/640x
write (Program or Erase) with a 2.7-3.6V power supply.
These devices conform to JEDEC standard pinouts for
x16 memories.
Featuring
SST39VF160x/320x/640x devices provide a typical Word-
Program time of 7 μsec. These devices use Toggle Bit or
Data# Polling to indicate the completion of Program opera-
tion. To protect against inadvertent write, they have on-chip
hardware and Software Data Protection schemes.
Designed, manufactured, and tested for a wide spectrum of
applications, these devices are offered with a guaranteed
typical endurance of 100,000 cycles. Data retention is rated
at greater than 100 years.
high
performance
Word-Program,
the
The SST39VF160x/320x/640x devices are suited for appli-
cations that require convenient and economical updating of
program, configuration, or data memory. For all system
applications, they significantly improve performance and
reliability, while lowering power consumption. They inher-
ently use less energy during Erase and Program than alter-
native flash technologies. The total energy consumed is a
function of the applied voltage, current, and time of applica-
tion. Since for any given voltage range, the SuperFlash
technology uses less current to program and has a shorter
erase time, the total energy consumed during any Erase or
Program operation is less than alternative flash technolo-
gies. These devices also improve flexibility while lowering
the cost for program, data, and configuration storage appli-
cations.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose
Erase and Program times increase with accumulated
Erase/Program cycles.
SST39VF160x / 320x / 640x2.7V 16Mb / 32Mb / 64Mb (x16) MPF+ memories
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SST39VF1602-70-4C-EKE-T 功能描述:閃存 2.7 to 3.6V 16Mbit Multi-Purpose 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST39VF1602-70-4I-B3KE 功能描述:閃存 16M (1Mx16) 70ns 2.7-3.6V Industrial RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST39VF1602-70-4I-B3KE-T 功能描述:閃存 16M (1Mx16) 70ns 2.7-3.6V Industrial RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST39VF1602-70-4I-EK 功能描述:閃存 1M X 16 FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST39VF1602-70-4I-EKE 功能描述:閃存 1M X 16 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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