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參數(shù)資料
| 型號(hào)： | SST39VF080-70-4C-B3KE |
| 廠商： | SILICON STORAGE TECHNOLOGY INC |
| 元件分類： | PROM |
| 英文描述： | 64 Mbit (x16) Multi-Purpose Flash Plus |
| 中文描述： | 1M X 8 FLASH 2.7V PROM, 70 ns, PBGA48 |
| 封裝： | 6 X 8 MM, 0.8 MM PITCH, LEAD FREE, MO-210AB-1, TFBGA-48 |
| 文件頁數(shù)： | 8/25頁 |
| 文件大?。?/td> | 364K |
| 代理商： | SST39VF080-70-4C-B3KE |
8
EOL Data Sheet
8 Mbit Multi-Purpose Flash
SST39LF080 / SST39VF080
2007 Silicon Storage Technology, Inc.
S71146-07-EOL
6/07
TABLE
6: S
YSTEM
I
NTERFACE
I
NFORMATION
FOR
SST39LF/VF080
Address
1BH
Data
27H
1
30H
1
36H
Data
V
DD
Min (Program/Erase)
DQ
7
-DQ
4
: Volts, DQ
3
-DQ
0
: 100 millivolts
V
DD
Max (Program/Erase)
DQ
7
-DQ
4
: Volts, DQ
3
-DQ
0
: 100 millivolts
V
PP
min (00H = no V
PP
pin)
V
PP
max (00H = no V
PP
pin)
Typical time out for Byte-Program 2
N
μs (2
4
= 16 μs)
Typical time out for min size buffer program 2
N
μs (00H = not supported)
Typical time out for individual Sector/Block-Erase 2
N
ms (2
4
= 16 ms)
Typical time out for Chip-Erase 2
N
ms (2
6
= 64 ms)
Maximum time out for Byte-Program 2
N
times typical (2
1
x 2
4
= 32 μs)
Maximum time out for buffer program 2
N
times typical
Maximum time out for individual Sector/Block-Erase 2
N
times typical (2
1
x 2
4
= 32 ms)
Maximum time out for Chip-Erase 2
N
times typical (2
1
x 2
6
= 128 ms)
1CH
1DH
1EH
1FH
20H
21H
22H
23H
24H
25H
26H
00H
00H
04H
00H
04H
06H
01H
00H
01H
01H
T6.2 1146
1. 0030H for SST39LF080 and 0027H for SST39VF080
TABLE
Address
27H
28H
29H
2AH
2BH
2CH
2DH
2EH
2FH
30H
31H
32H
33H
34H
7: D
EVICE
G
EOMETRY
I
NFORMATION
FOR
SST39LF/VF080
Data
Data
14H
Device size = 2
N
Bytes (14H = 20; 2
20
= 1 MByte)
00H
Flash Device Interface description; 0000H = x8-only asynchronous interface
00H
00H
Maximum number of bytes in multi-byte write = 2
N
(00H = not supported)
00H
02H
Number of Erase Sector/Block sizes supported by device
FFH
Sector Information (y + 1 = Number of sectors; z x 256B = sector size)
00H
y = 255 + 1 = 256 sectors (00FFH = 255)
10H
00H
z = 16 x 256 Bytes = 4 KByte/sector (0010H = 16)
0FH
Block Information (y + 1 = Number of blocks; z x 256B = block size)
00H
y = 15 + 1 = 16 blocks (000FH = 15)
00H
01H
z = 256 x 256 Bytes = 64 KByte/block (0100H = 256)
T7.0 1146
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SST39VF080-70-4C-EI | 功能描述:閃存 1M X 8 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39VF080-70-4C-EIE | 功能描述:閃存 1M X 8 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39VF080-90-4C-EI | 功能描述:閃存 U 804-39VF0807CEI RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39VF088-70-4C-EKE | 功能描述:閃存 1M X 8 FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST39VF100-70-4C-B3K | 功能描述:閃存 64K X 16 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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