參數(shù)資料
型號: SST36VF1601
廠商: Silicon Storage Technology, Inc.
英文描述: 16 Mbit Concurrent SuperFlash
中文描述: 16兆位并行超快閃
文件頁數(shù): 13/26頁
文件大小: 404K
代理商: SST36VF1601
Data Sheet
16 Mbit Concurrent SuperFlash
SST36VF1601
13
2001 Silicon Storage Technology, Inc.
S71142-06-000
11/01 373
AC CHARACTERISTICS
TABLE 12: R
EAD
C
YCLE
T
IMING
P
ARAMETERS
V
DD
= 2.7-3.6V
Symbol
T
RC
T
CE
T
AA
T
OE
T
CLZ1
T
OLZ1
T
CHZ1
T
OHZ1
T
OH1
T
RP1
T
RHR1
T
RY1,2
Parameter
Read Cycle Time
Chip Enable Access Time
Address Access Time
Output Enable Access Time
CE# Low to Active Output
OE# Low to Active Output
CE# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address Change
RST# Pulse Width
RST# High before Read
RST# Pin Low to Read Mode
SST36VF1601-70
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs
Min
70
Max
70
70
35
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
2. This parameter applies to Sector-Erase, Block-Erase and Program operations. This parameter does not apply to Chip-Erase opera-
tions.
0
0
20
20
0
500
50
150
T12.9 373
TABLE 13: P
ROGRAM
/E
RASE
C
YCLE
T
IMING
P
ARAMETERS
Symbol
T
BP
T
AS
T
AH
T
CS
T
CH
T
OES
T
OEH
T
CP
T
WP
T
WPH1
T
CPH1
T
DS
T
DH1
T
IDA1
T
SE
T
BE
T
SCE
T
BY1
T
BR
Parameter
Word-Program Time
Address Setup Time
Address Hold Time
WE# and CE# Setup Time
WE# and CE# Hold Time
OE# High Setup Time
OE# High Hold Time
CE# Pulse Width
WE# Pulse Width
WE# Pulse Width High
CE# Pulse Width High
Data Setup Time
Data Hold Time
Software ID Access and Exit Time
Sector-Erase
Block-Erase
Chip-Erase
RY/BY# Delay Time
Bus Recovery Time
Min
Max
20
Units
μs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
ms
ns
μs
0
40
0
0
0
10
40
40
30
30
30
0
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
150
25
25
100
90
1
T13.6 373
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