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參數(shù)資料
| 型號(hào)： | SST36VF1601 |
| 廠商： | Silicon Storage Technology, Inc. |
| 英文描述： | 16 Mbit Concurrent SuperFlash |
| 中文描述： | 16兆位并行超快閃 |
| 文件頁數(shù)： | 12/26頁 |
| 文件大?。?/td> | 404K |
| 代理商： | SST36VF1601 |
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12
Data Sheet
16 Mbit Concurrent SuperFlash
SST36VF1601
2001 Silicon Storage Technology, Inc.
S71142-06-000
11/01 373
TABLE
8: DC O
PERATING
C
HARACTERISTICS
V
DD
= 2.7-3.6V
Symbol
I
DD
Parameter
Active V
DD
Current
Limits
Max
Test Conditions
Address input=V
IL
/V
IH
, at f=1/T
RC
Min,
V
DD
=V
DD
Max
CE#=OE#=V
IL
, WE#=V
IH
, all I/Os open
CE#=V
IL
, OE#=V
IH
Min
Units
Read
Program and Erase
Concurrent Read/Write
Standby V
DD
Current
Reset V
DD
Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input Low Voltage (CMOS)
Input High Voltage
Input High Voltage (CMOS)
Output Low Voltage
Output High Voltage
35
40
75
20
20
1
1
0.8
0.3
mA
mA
mA
μA
μA
μA
μA
V
V
V
V
V
V
I
SB
I
RT
I
LI
I
LO
V
IL
V
ILC
V
IH
V
IHC
V
OL
V
OH
CE#=V
IHC
, V
DD
=V
DD
Max
RST# = V
SS
± 0.3V
V
IN
=GND to V
DD
, V
DD
=V
DD
Max
V
OUT
=GND to V
DD
, V
DD
=V
DD
Max
V
DD
=V
DD
Min
V
DD
=V
DD
Max
V
DD
=V
DD
Max
V
DD
=V
DD
Max
I
OL
=100 μA, V
DD
=V
DD
Min
I
OH
=-100 μA, V
DD
=V
DD
Min
0.7 V
DD
V
DD
-0.3
0.2
V
DD
-0.2
T8.6 373
TABLE
9: R
ECOMMENDED
S
YSTEM
P
OWER
-
UP
T
IMINGS
Symbol
T
PU-READ1
T
PU-WRITE1
Parameter
Power-up to Read Operation
Power-up to Write Operation
Minimum
100
100
Units
μs
μs
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
T9.2 373
TABLE 10: C
APACITANCE
(Ta = 25°C, f=1 Mhz, other pins open)
Parameter
C
I/O1
C
IN1
Description
I/O Pin Capacitance
Input Capacitance
Test Condition
V
I/O
= 0V
V
IN
= 0V
Maximum
10 pF
10 pF
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
T10.0 373
TABLE 11: R
ELIABILITY
C
HARACTERISTICS
Symbol
N
END1
T
DR1
I
LTH1
Parameter
Endurance
Data Retention
Latch Up
Minimum Specification
10,000
Units
Cycles
Years
mA
Test Method
JEDEC Standard A117
JEDEC Standard A103
JEDEC Standard 78
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
100
100 + I
DD
T11.1 373
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| SST36VF1601-70-4C-BK | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:16 Mbit Concurrent SuperFlash |
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| SST36VF1601-70-4E-BK | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:16 Mbit Concurrent SuperFlash |
| SST36VF1601-70-4E-EK | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:16 Mbit Concurrent SuperFlash |
| SST36VF1601-90-4C-BK | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:16 Megabit Concurrent SuperFlash |
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