參數(shù)資料
型號： SST34HF3223B-70-4C-LP
英文描述： MIXED MEMORY|SRAM+EEPROM|CMOS|BGA|56PIN|PLASTIC
中文描述： 混合存儲器|靜態(tài)存儲器EEPROM中|的CMOS | BGA封裝| 56PIN |塑料
文件頁數(shù)： 13/32頁
文件大?。?/td> 486K
代理商： SST34HF3223B-70-4C-LP
Data Sheet
16 Mbit Concurrent SuperFlash + 2 / 4 Mbit SRAM ComboMemory
SST34HF1621 / SST34HF1641
13
2001 Silicon Storage Technology, Inc.
S71172-05-000
10/01 523
TABLE
9: R
ECOMMENDED
S
YSTEM
P
OWER
-
UP
T
IMINGS
Symbol
T
PU-READ1
T
PU-WRITE1
Parameter
Power-up to Read Operation
Power-up to Write Operation
Minimum
100
100
Units
μs
μs
T9.1 523
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 10: C
APACITANCE
(Ta = 25°C, f=1 Mhz, other pins open)
Parameter
C
I/O1
C
IN1
Description
I/O Pin Capacitance
Input Capacitance
Test Condition
V
I/O
= 0V
V
IN
= 0V
Maximum
12 pF
6 pF
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
T10.0 523
TABLE 11: F
LASH
R
ELIABILITY
C
HARACTERISTICS
Symbol
N
END1
T
DR1
I
LTH1
Parameter
Endurance
Data Retention
Latch Up
Minimum Specification
10,000
100
100 + I
DD
Units
Cycles
Years
mA
Test Method
JEDEC Standard A117
JEDEC Standard A103
JEDEC Standard 78
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
T11.1 523
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