參數(shù)資料
型號(hào)： SST34HF1682D-70-4E-L1PE
廠商： SILICON STORAGE TECHNOLOGY INC
元件分類： 存儲(chǔ)器
英文描述： 16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory
中文描述： SPECIALTY MEMORY CIRCUIT, PBGA56
封裝： 8 X 10 MM, 1.40 MM HEIGHT, MO-210, LFBGA-56
文件頁(yè)數(shù)： 19/38頁(yè)
文件大?。?/td> 488K
代理商： SST34HF1682D-70-4E-L1PE
Advance Information
16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory
SST34HF1602C / SST34HF1622C / SST34HF1642C
SST34HF1642D / SST34HF1682D / SST34HF1622S / SST34HF1642S
19
2004 Silicon Storage Technology, Inc.
S71256-00-000
3/04
TABLE 14: F
LASH
R
EAD
C
YCLE
T
IMING
P
ARAMETERS
V
DD
= 2.7-3.3V
Symbol
T
RC
T
CE
T
AA
T
OE
T
CLZ1
T
OLZ1
T
CHZ1
T
OHZ1
T
OH1
T
RP1
T
RHR1
T
RY1,2
Parameter
Read Cycle Time
Chip Enable Access Time
Address Access Time
Output Enable Access Time
BEF# Low to Active Output
OE# Low to Active Output
BEF# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address Change
RST# Pulse Width
RST# High Before Read
RST# Pin Low to Read
Min
70
Max
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs
70
70
35
0
0
20
20
0
500
50
20
T14.0 1256
1. This parameter is measured only for initial qualification and after the design or process change that could affect this parameter.
2. This parameter applies to Sector-Erase, Block-Erase and Program operations. This parameter does not apply to Chip-Erase.
TABLE 15: F
LASH
P
ROGRAM
/E
RASE
C
YCLE
T
IMING
P
ARAMETERS
Symbol
T
BP
T
AS
T
AH
T
CS
T
CH
T
OES
T
OEH
T
CP
T
WP
T
WPH1
T
CPH1
T
DS
T
DH1
T
IDA1
T
ES
T
BY1,2
T
BR1
T
SE
T
BE
T
SCE
Parameter
Word-Program Time
Address Setup Time
Address Hold Time
WE# and BEF# Setup Time
WE# and BEF# Hold Time
OE# High Setup Time
OE# High Hold Time
BEF# Pulse Width
WE# Pulse Width
WE# Pulse Width High
BEF# Pulse Width High
Data Setup Time
Data Hold Time
Software ID Access and Exit Time
Erase-Suspend Latency
RY/BY# Delay Time
Bus# Recovery Time
Sector-Erase
Block-Erase
Chip-Erase
Min
Max
10
Units
μs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs
ns
μs
ms
ms
ms
0
40
0
0
0
10
40
40
30
30
30
0
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
2. This parameter applies to Sector-Erase, Block-Erase, and Program operations.
This parameter does not apply to Chip-Erase operations.
150
20
90
1
25
25
50
T15.0 1256
相關(guān)PDF資料
PDF描述
SST34HF1602S-70-4E-L1PE 16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory
SST34HF1622S-70-4E-L1PE 16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory
SST34HF1642S-70-4E-L1PE 16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory
SST34HF1682S-70-4E-L1PE 16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory
SST34HF1622C 16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SST34HF1682D-70-4E-L1SE 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory
SST34HF1682D-70-4E-LPE 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory
SST34HF1682D-70-4E-LSE 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory
SST34HF1682S-70-4C-B1PE 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory
SST34HF1682S-70-4C-B1SE 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory
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