參數(shù)資料
型號: SST32HF3242-70-4C-LFSE
廠商: SILICON STORAGE TECHNOLOGY INC
元件分類: 存儲器
英文描述: Multi-Purpose Flash Plus + SRAM ComboMemory
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA63
封裝: 8 X 10 MM, 1.40 MM HEIGHT, ROHS COMPLIANT, MO-210, LFBGA-63
文件頁數(shù): 16/36頁
文件大?。?/td> 414K
代理商: SST32HF3242-70-4C-LFSE
16
Preliminary Specifications
Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1642 / SST32HF1682 / SST32HF3242 / SST32HF3282
SST32HF1622C / SST32HF1642C / SST32HF3242C
2005 Silicon Storage Technology, Inc.
S71253-03-000
5/05
FIGURE 4: SRAM W
RITE
C
YCLE
T
IMING
D
IAGRAM
(WE# C
ONTROLLED
)
1
T
AWS
ADDRESSES A
MSS
3
-0
BES1#
BES2
WE#
UBS#, LBS#
T
WPS
T
WRS
T
WCS
T
ASTS
T
BWS
T
BWS
T
BYWS
T
ODWS
T
OEWS
T
DHS
T
DSS
1253 F04.0
NOTE 2
NOTE 2
DQ
15-8,
DQ
7-0
VALID DATA IN
Note:
1. If OE# is High during the Write cycle, the outputs will remain at high impedance.
2. If BES1# goes Low or BES2 goes high coincident with or after WE# goes Low, the output will remain at high impedance.
If BES1# goes High or BES2 goes low coincident with or before WE# goes High, the output will remain at high impedance.
Because D
IN
signals may be in the output state at this time, input signals of reverse polarity must not be applied.
3. A
MSS
= Most Significant SRAM Address
A
MSS
= A
16
for SST32HF1622C, A
17
for SST32HFxx42x, and A
18
for SST32HFxx82
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