參數(shù)資料
型號(hào)： SST32HF162-70-4C-L3K
英文描述： MIXED MEMORY|SRAM+EEPROM|CMOS|BGA|48PIN|PLASTIC
中文描述： 混合存儲(chǔ)器|靜態(tài)存儲(chǔ)器EEPROM中|的CMOS | BGA封裝| 48PIN |塑料
文件頁(yè)數(shù)： 1/28頁(yè)
文件大?。?/td> 342K
代理商： SST32HF162-70-4C-L3K
2001 Silicon Storage Technology, Inc.
S71171-05-000
8/01
1
520
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF and ComboMemory are trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
Data Sheet
FEATURES:
MPF + SRAM ComboMemory
– SST32HF802: 512K x16 Flash + 128K x16 SRAM
– SST32HF162: 1M x16 Flash + 128K x16 SRAM
– SST32HF164: 1M x16 Flash + 256K x16 SRAM
Single 2.7-3.3V Read and Write Operations
Concurrent Operation
– Read from or write to SRAM while
Erase/Program Flash
Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
Low Power Consumption:
– Active Current: 15 mA (typical) for
Flash or SRAM Read
– Standby Current: 20 μA (typical)
Flexible Erase Capability
– Uniform 2 KWord sectors
– Uniform 32 KWord size blocks
Fast Read Access Times:
– Flash: 70 ns and 90 ns
– SRAM: 70 ns and 90 ns
Latched Address and Data for Flash
Flash Fast Erase and Word-Program:
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Word-Program Time: 14 μs (typical)
– Chip Rewrite Time:
SST32HF802: 8 seconds (typical)
SST32HF162/164: 15 seconds (typical)
Flash Automatic Erase and Program Timing
– Internal V
PP
Generation
Flash End-of-Write Detection
– Toggle Bit
– Data# Polling
CMOS I/O Compatibility
JEDEC Standard Command Set
Package Available
– 48-lead TSOP (12mm x 20mm)
– 48-ball TBGA (10mm x 12mm)
PRODUCT DESCRIPTION
The SST32HF802/162/164 ComboMemory devices inte-
grate a 512K x16 or 1M x16 CMOS flash memory bank
with a 128K x16 or 256K x16 CMOS SRAM memory bank
in a Multi-Chip Package (MCP), manufactured with SST’s
proprietary, high performance SuperFlash technology.
Featuring high performance Word-Program, the flash
memory bank provides a maximum Word-Program time of
14 μsec. The entire flash memory bank can be erased and
programmed word-by-word in typically 8 seconds for the
SST32HF802 and 15 seconds for the SST32HF162/164,
when using interface features such as Toggle Bit or Data#
Polling to indicate the completion of Program operation. To
protect against inadvertent flash write, the SST32HF802/
162/164 devices contain on-chip hardware and software
data protection schemes.The SST32HF802/162/164
devices offer a guaranteed endurance of 10,000 cycles.
Data retention is rated at greater than 100 years.
The SST32HF802/162/164 devices consist of two inde-
pendent memory banks with respective bank enable sig-
nals. The Flash and SRAM memory banks are
superimposed in the same memory address space. Both
memory banks share common address lines, data lines,
WE# and OE#. The memory bank selection is done by
memory bank enable signals. The SRAM bank enable sig-
nal, BES# selects the SRAM bank. The flash memory
bank enable signal, BEF# selects the flash memory bank.
The WE# signal has to be used with Software Data Protec-
tion (SDP) command sequence when controlling the Erase
and Program operations in the flash memory bank. The
SDP command sequence protects the data stored in the
flash memory bank from accidental alteration.
The SST32HF802/162/164 provide the added functionality
of being able to simultaneously read from or write to the
SRAM bank while erasing or programming in the flash
memory bank. The SRAM memory bank can be read or
written while the flash memory bank performs Sector-
Erase, Bank-Erase, or Word-Program concurrently. All
flash memory Erase and Program operations will automati-
cally latch the input address and data signals and complete
the operation in background without further input stimulus
requirement. Once the internally controlled erase or pro-
gram cycle in the flash bank has commenced, the SRAM
bank can be accessed for read or write.
The SST32HF802/162/164 devices are suited for applica-
tions that use both flash memory and SRAM memory to
store code or data. For systems requiring low power and
small form factor, the SST32HF802/162/164 devices signif-
icantly improve performance and reliability, while lowering
power consumption, when compared with multiple chip
solutions. The SST32HF802/162/164 inherently use less
energy during erase and program than alternative flash
Multi-Purpose Flash (MPF) + SRAM ComboMemory
SST32HF802 / SST32HF162 / SST32HF164
SST32HF802 / 162 / 164MPF (x16) + 1Mb SRAM (x16) ComboMemories
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SST32HF162-70-4C-LBK 功能描述:組合存儲(chǔ)器 16M FLASH 2M SRAM RoHS:否 制造商:Microchip Technology 組織:512 K x 16 電源電壓-最大: 電源電壓-最小: 最大工作溫度:+ 85 C 最小工作溫度:- 20 C 封裝 / 箱體:LFBGA-48 封裝:Tray
SST32HF162-70-4C-LBKE 功能描述:組合存儲(chǔ)器 16M FLASH 2M SRAM RoHS:否 制造商:Microchip Technology 組織:512 K x 16 電源電壓-最大: 電源電壓-最小: 最大工作溫度:+ 85 C 最小工作溫度:- 20 C 封裝 / 箱體:LFBGA-48 封裝:Tray
SST32HF162-70-4C-TBK 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:Multi-Purpose Flash (MPF) + SRAM ComboMemory
SST32HF162-70-4E-EK 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:Multi-Purpose Flash (MPF) + SRAM ComboMemory
SST32HF162-70-4E-L3K 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MIXED MEMORY|SRAM+EEPROM|CMOS|BGA|48PIN|PLASTIC
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