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參數(shù)資料
| 型號(hào)： | SST30VR021-500-E-KH |
| 英文描述： | SRAM/ROM |
| 中文描述： | 的SRAM /光盤(pán) |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大?。?/td> | 111K |
| 代理商： | SST30VR021-500-E-KH |
6
Data Sheet
2 Mbit ROM + 1 Mbit / 2Mbit / 256 Kbit SRAM
ROM/RAM Combo
SST30VR021 / SST30VR022 / SST30VR023
2001 Silicon Storage Technology, Inc.
S71135-02-000
4/01
380
FIGURE 5: ROM R
EAD
C
YCLE
T
IMING
D
IAGRAM
(ROMCS# & OE# C
ONTROLLED
)
TRC
TAA
TCO
TLZ(2)
TOHZ(1)
TOH
THZ(1,2)
Data Valid
380 ILL F03.0
Data Out
OE#
ROMCS#
High-Z
Address
TOE
TOLZ
Notes: 1. THZ and TOHZ are defined as the time at which the outputs achieve the open circuit condition
and are referenced to the VOH or VOL.
2. At any given temperature and voltage condition THZ(max) is less than TLZ(min) both for a given
device and from device to device.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SST30VR021-500-I-KH | Input/Output (I/O); Supply Voltage: 2.4V to 5.25V; Temperature Range: -40° to +85°C; Package: 8-SOIC; Features: 4 Configurable I/Os |
| SST30VR021-500-I-WH | Input/Output (I/O); Supply Voltage: 2.4V to 5.25V; Temperature Range: -40° to +85°C; Package: 16-QFN (16-COL); Features: 6 Configurable I/Os |
| SST30VR023-500-C-KH | Input/Output (I/O); Supply Voltage: 2.4V to 5.25V; Temperature Range: -40° to +85°C; Package: 16-QFN (16-COL); Features: 8 Configurable I/Os |
| SST30VR023-500-E-KH | SRAM/ROM |
| SST30VR023-500-I-KH | SRAM/ROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SST30VR021-500-E-WH | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:2 Mbit ROM + 1 Mbit / 2Mbit / 256 Kbit SRAM ROM/RAM Combo |
| SST30VR021-500-I-KH | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SRAM/ROM |
| SST30VR021-500-I-WH | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SRAM/ROM |
| SST30VR021-70-C-WH | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:2 Mbit ROM + 1 Mbit / 2Mbit / 256 Kbit SRAM ROM/RAM Combo |
| SST30VR021-70-E-WH | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:2 Mbit ROM + 1 Mbit / 2Mbit / 256 Kbit SRAM ROM/RAM Combo |
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