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參數(shù)資料
| 型號： | SSS2N80A |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 1.5A I(D) | TO-220F |
| 中文描述： | 晶體管| MOSFET的| N溝道| 800V的五（巴西）直| 1.5AI（四）|至220F |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 264K |
| 代理商： | SSS2N80A |
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25
μ
A (Max.) @ V
DS
= 600V
Lower R
DS(ON)
: 3.892
(Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
R
R
JC
JA
/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
Continuous Drain Current (T
C
=100
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
)
)
)
Characteristic
Value
600
1.3
0.82
6
30
+
_
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
P
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
A
TO-220F
1.Gate 2. Drain 3. Source
3
2
1
O
1
O
O
1
O
1
2
O
3
o
C
o
C
o
C
o
C
o
C
o
C
θ
θ
SSS2N60A
BV
DSS
= 600 V
R
DS(on)
= 5
I
D
= 1.3 A
138
1.3
2.3
3.0
23
0.18
- 55 to +150
300
5.5
62.5
--
--
1999 Fairchild Semiconductor Corporation
Rev. B
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
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| SSS-3F | 制造商:SR COMPONENTS 功能描述: 制造商:SR Components Inc 功能描述: |
| SSS3N70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:N-CHANNEL POWER MOSFETS |
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