參數(shù)資料
型號: SSM6K06FU
廠商: Toshiba Corporation
英文描述: High Speed Switching Applications
中文描述: 高速開關(guān)應(yīng)用
文件頁數(shù): 1/6頁
文件大?。?/td> 192K
代理商: SSM6K06FU
SSM6K06FU
2003-03-28
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6K06FU
High Speed Switching Applications
Small package
Low on resistance : R
on
= 160 m
max (@V
GS
= 4 V)
: R
on
= 210 m
max (@V
GS
= 2.5 V)
Low gate threshold voltage
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DS
20
V
Gate-source voltage
V
GSS
12
V
DC
I
D
1.1
Drain current
Pulse
I
DP
2.2
A
Drain power dissipation (Ta 25°C)
P
D
(Note 1)
300
mW
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Note 1: Mounted on FR4 board.
(25.4 mm 25.4 mm 1.6 t, Cu pad: 0.32 mm
2
6) Figure 1.
Marking
Equivalent Circuit
(top view)
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-2J1D
Weight: 6.8 mg (typ.)
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