參數(shù)資料
型號： SSM6K08FU
廠商： Toshiba Corporation
英文描述： CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)/Category
中文描述： CategoryTOSHIBA場效應晶體管硅?頻道馬鞍山型（U型MOSII）/分類
文件頁數(shù)： 1/6頁
文件大小： 160K
代理商： SSM6K08FU
SSM6K08FU
2002-01-24
1
CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)/Category
SSM6K08FU
High Speed Switching Applications
Small package
Low on resistance:
High-speed switching: t
on
= 16 ns (typ.)
Maximum Ratings
(Ta 25°C)
R
on
= 105 m
(max) (@V
GS
= 4 V)
R
on
= 140 m
(max) (@V
GS
= 2.5 V)
t
off
= 15 ns (typ.)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
20
V
Gate-Source voltage
V
GSS
12
V
DC
I
D
1.6
Drain current
Pulse
I
DP
3.2
A
Drain power dissipation
P
D
(Note1)
300
mW
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
55~150
C
Note1: Mounted on FR4 board.
(25.4 mm 25.4 mm 1.6 t, Cu Pad: 0.32 mm
2
6) Figure 1.
Marking
Circuit
(top view)
Equivalent
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2J1D
Weight: 6.8 mg (typ.)
6
K D C
4
1
2
3
5
4
1
2
3
6
5
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SSM6K08FU(TE85L,F) 制造商:Toshiba 功能描述:Trans MOSFET N-CH 20V 1.6A 6-Pin US T/R
SSM6K08FU_07 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High Speed Switching Applications
SSM6K08FUTE85LF 功能描述:MOSFET Vds=20V Id=1.6A 6Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SSM6K18TU 功能描述:MOSFET INCORRECT MOUSER P/N 6Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SSM6K18TU(TE85L,F) 功能描述:MOSFET Vds=20V Id=4A 6Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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