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參數(shù)資料
| 型號(hào)： | SSM25G45EM |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | N-CHANNEL INSULATED-GATE BOPOLAR TRANSISTOR |
| 中文描述： | N溝道絕緣柵BOPOLAR晶體管 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 256K |
| 代理商： | SSM25G45EM |
www.SiliconStandard.com 1 of 4
N-CHANNEL INSULATED-GATE BIPOLAR TRANSISTOR
High input impedance
V
CE
450
V
1
5
0A
High peak current capability I
CP
4.5V gate drive
E
E
E
G
C
C
SO-8
G
C
E
SSM2
5G45EM
9/21/2004 Rev.2.01
Absolute Maximum Ratings
Symbol
V
CE
Electrical Characteristics
@
T
j
=25
o
C
(unless otherwise specified)
Symbol
I
GES
I
CES
V
CE(sat)
V
GE(th)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
Rth
JA
Thermal Resistance Junction-Ambient
Min.
-
-
-
0.35
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
6
-
64.5
7
30
11.5
24.5
150
3.3
2227
200
79
-
Max. Units
10
10
8
1.2
-
-
-
-
-
-
-
-
-
-
50 °C/W
μ
A
μ
A
V
V
nC
nC
nC
ns
ns
ns
μ
s
pF
pF
pF
1
Notes:
1.Surface mounted on 1 in
2
copper pad of
FR4 board ; 125
°C
/W when mounted on
m
in. copper pad.
V
V
A
2.5
V
CC
=225V
I
C
=50A
R
G
=25
Gate-Emitter Voltage
Pulsed Gate-Emitter Voltage
Gate-Emitter Charge
Gate-Collector Charge
Turn-on Delay Time
Operating Junction Temperature Range
-55 to 150
°C
-55 to 150
°C
W
Parameter
Storage Temperature Range
Pulsed Collector Current
Maximum Power Dissipation
Parameter
V
GE
V
GEP
I
CP
P
D
@
T
C
=2
5°C
1
T
STG
T
J
450
± 6
± 8
150
Rating
Collector-Emitter Voltage
Units
V
Reverse Transfer Capacitance
V
CE
=450V, V
GE
=0V
V
GE
=4.5V, I
CP
=150A (Pulsed)
V
CE
=V
GE
, I
C
=250uA
I
C
=50A
V
CE
=360V
V
GE
=5V
V
GE
=5V
V
GE
=0V
V
CE
=25V
f=1.0MHz
Test Conditions
Collector-Emitter Saturation Voltage
Gate Threshold Voltage
Total Gate Charge
Gate-Emitter Leakage Current
Collector-Emitter Leakage Current (Tj=2
5°C
)
V
GE
=± 6V, V
CE
=0V
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Rise Time
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