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參數(shù)資料
| 型號： | SSM9916J |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | N-CHANNEL ENHANCEMENT-MODE POWER MOSFET |
| 中文描述： | N溝道增強型功率MOSFET |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 407K |
| 代理商： | SSM9916J |
www.SiliconStandard.com 1 of 6
SSM9916H,J
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Low on-resistance
Capable of 2.5V gate drive
Low drive current
Simple drive requirement
BV
DSS
R
DS(ON)
I
D
18V
25m
35A
Description
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@
T
C
=25
°C
I
D
@
T
C
=125
°C
I
DM
P
D
@
T
C
=25
°C
Total Power Dissipation
Linear Derating Factor
Units
V
V
A
W/
°C
T
STG
T
J
Symbol
Value
2.5
110
Unit
°C
/W
°C
/W
Rthj-c
Rthj-a
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Thermal Data
Parameter
Storage Temperature Range
Operating Junction Temperature Range
50
W
0.4
-55 to 150
°C
-55 to 150
°C
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
1
16
A
90
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
35
A
Parameter
Rating
18
Drain-Source Voltage
Power MOSFETs from
Silicon Standard
provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
± 12
GDS
TO-252(H)
GD
S
TO-251(J)
G
D
S
Rev.2.02 1/29/2004
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