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參數(shù)資料
| 型號(hào)： | SSM01N60H |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | N-CHANNEL ENHANCEMENT-MODE POWER MOSFET |
| 中文描述： | N溝道增強(qiáng)型功率MOSFET |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 106K |
| 代理商： | SSM01N60H |
www.SiliconStandard.com 1 of 6
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Dynamic dv/dt rating
Repetitive-avalanche rated
Fast switching
Simple drive requirement
BV
DSS
R
DS(ON)
I
D
600V
8
1.6A
Description
Absolute Maximum Ratings
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
I
D
@
T
C
=25
°C
Continuous Drain Current, V
GS
@ 10V
I
D
@
T
C
=100
°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
1
P
D
@
T
C
=25
°C
Total Power Dissipation
Linear Derating Factor
Units
V
V
A
A
A
W
W/
°C
mJ
A
mJ
E
AS
I
AR
E
AR
T
STG
T
J
Single Pulse Avalanche Energy
2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Value
3.2
°C
/W
110
Unit
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
°C
/W
-55 to 150
°C
-55 to 150
°C
6
39
0.31
13
1.6
0.5
1
Parameter
Rating
600
Parameter
1.6
±
30
T
he
SSM01N60H is supplied in the industry-standard TO-252
package, which is widely preferred for commercial and
industrial
surface mount applications, and is well suited for AC/DC converters.
The
through-hole version (SSM01N60J) is available for low-footprint
applications.
G
DS
TO-251 (J)
GDS
TO-252 (H)
G
D
S
SSM01N60H,J
Rev.2.0
2
4
/06/200
4
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