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參數資料
| 型號： | SSI3N80A |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 3A I(D) | TO-262AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 800V的五（巴西）直| 3A條（?。﹟對262AA |
| 文件頁數： | 2/7頁 |
| 文件大?。?/td> | 663K |
| 代理商： | SSI3N80A |
N-C HANNEL
POWER MOSFET
Electrical Characteristics
(T
C
=25
Ο
C
unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
BV
DSS
BV/
T
J
V
GS(th)
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
R
DS(on)
I
GSS
I
DSS
V
V/
Ο
C
V
nA
μ
A
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS
=0V,I
D
=250
μ
A
I
D
=250
μ
A
See Fig 7
V
DS
=5V,I
D
=250
μ
A
V
GS
=30V
V
GS
=-30V
V
DS
=800V
V
DS
=640V,T
C
=125
Ο
C
V
GS
=10V,I
D
=0.85A
*
V
DS
=50V,I
D
=0.85A
V
DD
=400V,I
D
=2A,
R
G
=16
See Fig 13
V
DS
=640V,V
GS
=10V,
I
D
=2A
See Fig 6 & Fig 12
Drain-to-Source Leakage Current
V
GS
=0V,V
DS
=25V,f =1MHz
See Fig 5
O
4
O
5
O
4
O
4
O
4
O
5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
--
--
A
V
ns
μ
C
Integral reverse pn-diode
in the MOSFET
T
J
=25
T
J
=25
di
F
/dt=100A/
μ
s
Ο
C
,I
S
=3A,V
GS
=0V
Ο
C
,I
F
=3A
O
4
O
4
O
1
SSW/I3N80A
800
--
2.0
--
--
--
--
--
1.01
--
--
--
--
--
60
23
16
26
46
24
27
5.3
12.2
--
--
3.5
100
-100
25
250
4.8
--
750
75
30
40
60
100
60
35
--
--
2.17
580
--
--
--
330
1.52
3
12
1.4
--
--
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=50mH, I
AS
=3A, V
DD
=50V, R
G
=27
, Starting T
J
=25
I
SD
3A, di/dt 100A/
μ
s, V
DD
BV
DSS
, Starting T
J
=25
Pulse Test : Pulse Width = 250
μ
s, Duty Cycle 2%
Essentially Independent of Operating Temperature
O
5
Ο
C
Ο
C
<
O
1
O
O
3
O
2
4
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| SSI3N90A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 3A I(D) | TO-262AA |
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| SSI4N80A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4A I(D) | TO-262AA |
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