- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄372284 > SSI3N80A TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 3A I(D) | TO-262AA PDF資料下載
參數(shù)資料
| 型號(hào)： | SSI3N80A |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 3A I(D) | TO-262AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 800V的五（巴西）直| 3A條（?。﹟對(duì)262AA |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 663K |
| 代理商： | SSI3N80A |
Advanced Power MOSFET
FEATURES
D
2
-PAK
1. Gate 2. Drain 3. Source
1
3
2
1
2
3
I
2
-PAK
*
When mounted on the minimum pad size recommended (PCB Mount).
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
Continuous Drain Current (T
C
=100
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25
Total Power Dissipation (T
C
=25
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8“ from case for 5-seconds
Ο
C
)
Ο
C
)
Ο
C
)
Ο
C
)
Characteristic
Value
800
3
1.9
12
+
_
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
I
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W
W/
Ο
C
A
Ο
C
*
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25
μ
A (Max.) @ V
DS
= 800V
Low R
DS(ON)
: 3.800
(Typ.)
O
1
O
3
O
O
1
2
O
1
Thermal Resistance
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
R
θ
JC
R
θ
CS
R
θ
JA
Ο
C
/W
Characteristic
Max.
1.25
40
62.5
Units
Symbol
Typ.
--
--
--
SSW/I3N80A
BV
DSS
= 800 V
R
DS(on)
= 4.8
I
D
= 3 A
240
3
10
2.0
3.1
100
0.8
- 55 to +150
300
30
1999 Fairchild Semiconductor Corporation
Rev. B
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SSI3N90A | TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 3A I(D) | TO-262AA |
| SSW3N | IC MCU 8K LS USB/PS-2 18-SOIC |
| SSW60N06 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 60A I(D) | TO-252VAR |
| SSI60N05 | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 60A I(D) | TO-251VAR |
| SSI60N06 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 60A I(D) | TO-251VAR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SSI3N90A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 3A I(D) | TO-262AA |
| SSI4N60A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 4A I(D) | TO-262AA |
| SSI4N60B | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V N-Channel MOSFET |
| SSI4N60BTU | 功能描述:MOSFET NCh/600V/4a/2.5Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSI4N80A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4A I(D) | TO-262AA |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。