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參數(shù)資料
| 型號(hào)： | SPU31N05 |
| 廠商： | SIEMENS A G |
| 元件分類： | 功率晶體管 |
| 英文描述： | SIPMOS Power Transistor |
| 中文描述： | 31 A, 55 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 134K |
| 代理商： | SPU31N05 |
Semiconductor Group
2
30/Jan/1998
SPD31N05
SPU31N05
Maximum Ratings
Parameter
Symbol
Values
Unit
Operating temperature
T
j
T
stg
R
thJC
R
thJA
R
thJA
-55 ... + 175
°C
Storage temperature
-55 ... + 175
≤
2
≤
50
≤
100
Thermal resistance, junction - case
K/W
Thermal resistance, junction - ambient (PCB mount)**
Thermal resistance, junction - ambient
IEC climatic category, DIN IEC 68-1
55 / 175 / 56
** when mounted on 1 " square PCB ( FR4 );for recommended footprint
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= 0.25 mA,
T
j
= 25 °C
Gate threshold voltage
V
(BR)DSS
55
-
-
V
V
GS=
V
DS,
I
D
= 50 μA
Zero gate voltage drain current
V
GS(th)
2.1
3
4
V
DS
= 50 V,
V
GS
= 0 V,
T
j
= -40 °C
V
DS
= 50 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= 50 V,
V
GS
= 0 V,
T
j
= 150 °C
Gate-source leakage current
I
DSS
-
-
-
-
0.1
-
100
1
0.1
μA
V
GS
= 20 V,
V
DS
= 0 V
Drain-Source on-resistance
I
GSS
-
10
100
nA
V
GS
= 10 V,
I
D
= 22 A
R
DS(on)
-
0.03
0.04
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