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參數(shù)資料
| 型號： | SPN9926S8RG |
| 英文描述： | N-Channel Enhancement Mode MOSFET |
| 中文描述： | N溝道增強型MOS管 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 218K |
| 代理商： | SPN9926S8RG |
ELECTRICAL CHARACTERISTICS
(T
A
=25
Unless otherwise noted)
℃
2007/ 06 / 08
Ver.1
Page 3
SPN9926
N-Channel Enhancement Mode MOSFET
Parameter
Symbol
Conditions
Min.
Typ
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
V
(BR)DSS
V
GS
=0V,I
D
=250uA
V
GS(th)
V
DS
=V
GS
,I
D
=250uA
I
GSS
V
DS
=0V,V
GS
=±12V
V
DS
=20V,V
GS
=0V
I
DSS
V
DS
=20V,V
GS
=0V
T
J
=55
℃
I
D(on)
V
DS
≦
5V,V
GS
=4.5V
V
GS
=4.5V,I
D
=5.0A
V
GS
=2.5V,I
D
=4.0A
R
DS(on)
V
GS
=1.8V,I
D
=2.8A
gfs
V
DS
=5V,I
D
=-3.6A
V
SD
I
S
=1.6A,V
GS
=0V
20
0.4
1.0
±100
1
V
nA
Zero Gate Voltage Drain Current
5
uA
On-State Drain Current
6
A
0.040
0.055
0.075
10
0.8
0.050
0.065
0.090
1.2
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
S
V
Dynamic
Total Gate Charge
Q
g
4.8
8
Gate-Source Charge
Q
gs
1.0
Gate-Drain Charge
Q
gd
V
DS
=6V,V
GS
=4.5V
I
D
≡
2.8A
1.0
nC
Input Capacitance
C
iss
485
Output Capacitance
Reverse Transfer Capacitance
C
oss
C
rss
85
40
V
DS
=6V,V
GS
=0V
f=1MHz
pF
t
d(on)
8
14
Turn-On Time
t
r
12
18
t
d(off)
30
35
Turn-Off Time
t
f
V
DD
=6V,R
L
=6
I
D
≡
1.0A,V
GEN
=4.5V
R
G
=6
12
16
ns
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