參數(shù)資料
型號(hào): SPN9926S8TG
英文描述: N-Channel Enhancement Mode MOSFET
中文描述: N溝道增強(qiáng)型MOS管
文件頁(yè)數(shù): 1/8頁(yè)
文件大小: 218K
代理商: SPN9926S8TG
DESCRIPTION
The SPN9926 is the Dual N-Channel logic enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other
battery
powered
switching .
2007/ 06 / 08
Ver.1
Page 1
SPN9926
N-Channel Enhancement Mode MOSFET
APPLICATIONS
z
Power Management in Note book
z
Portable Equipment
z
Battery Powered System
z
DC/DC Converter
z
Load Switch
z
DSC
z
LCD Display inverter
circuits
where
high-side
FEATURES
20V/5.0A,R
DS(ON)
=50m
@V
GS
=4.5V
20V/4.0A,R
DS(ON)
=65m
@V
GS
=2.5V
20V/2.8A,R
DS(ON)
=90m
@V
GS
=1.8V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOP – 8P package design
PIN CONFIGURATION(SOP – 8P)
PART MARKING
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