參數(shù)資料
型號(hào): SPN9926AS8TG
英文描述: N-Channel Enhancement Mode MOSFET
中文描述: N溝道增強(qiáng)型MOS管
文件頁數(shù): 1/8頁
文件大?。?/td> 225K
代理商: SPN9926AS8TG
DESCRIPTION
The
SPN9926A
enhancement mode power field effect transistors are
produced using high cell density , DMOS trench
technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other
battery
powered
switching .
FEATURES
20V/6.0A,R
DS(ON)
=30m
@V
GS
=4.5V
20V/5.0A,R
DS(ON)
=42m
@V
GS
=2.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOP – 8P package design
2007/ 06 / 20
Ver.1
Page 1
SPN9926A
N-Channel Enhancement Mode MOSFET
APPLICATIONS
z
Power Management in Note book
z
Portable Equipment
z
Battery Powered System
z
DC/DC Converter
z
Load Switch
z
DSC
z
LCD Display inverter
is
the
Dual
N-Channel
logic
circuits
where
high-side
PIN CONFIGURATION(SOP – 8P)
PART MARKING
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