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參數資料
| 型號： | SPN8882T252R |
| 英文描述： | N-Channel Enhancement Mode MOSFET |
| 中文描述： | N溝道增強型MOS管 |
| 文件頁數： | 3/9頁 |
| 文件大小： | 250K |
| 代理商： | SPN8882T252R |
ELECTRICAL CHARACTERISTICS
(TA=25
Unless otherwise noted)
℃
2007/07/20
Ver.2
Page 3
SPN8882
N-Channel Enhancement Mode MOSFET
Parameter
Symbol
Conditions
Min.
Typ
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
V
(BR)DSS
V
GS
= 0V , I
D
=250uA
V
GS(th)
V
DS
= V
GS
,I
DS
=250uA
I
GSS
V
DS
= 0V,V
GS
= ±20 V
V
DS
= 24V,V
GS
=0V
I
DSS
V
DS
= 24V,V
GS
=0V,
T
J
= 125C
V
GS
= 10V, I
D
= 35A
R
DS(on)
V
GS
= 4.5V, I
D
= 35A
gfs
V
DS
= 15V, I
D
=20 A
V
SD
I
F
= 40 A,V
GS
= 0V
30
0.8
2.4
±100
1
V
nA
Zero Gate Voltage Drain Current
100
uA
0.008
0.012
1.0
0.010
0.014
1.5
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
10
S
V
Dynamic
Total Gate Charge
Q
g
12
20
Gate-Source Charge
Q
gs
4
Gate-Drain Charge
Q
gd
V
DS
= 15V,V
GS
= 5V,
I
D
=50 A
5
nC
Input Capacitance
C
iss
1500
Output Capacitance
Reverse Transfer Capacitance
C
oss
C
rss
320
200
V
GS
= 0V, V
DS
= 25V,
F=1MHz
pF
t
d(on)
8
12
Turn-On Time
t
r
10
15
t
d(off)
18
30
Turn-Off Time
t
f
(V
DD
= 15 V,I
D
= 50 A,
V
GS
=10V,R
G
= 2.5
)
6
9
ns
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