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參數(shù)資料
| 型號(hào)： | SPN8882 |
| 英文描述： | N-Channel Enhancement Mode MOSFET |
| 中文描述： | N溝道增強(qiáng)型MOS管 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 250K |
| 代理商： | SPN8882 |
PIN DESCRIPTION
2007/07/20
Ver.2
Page 2
SPN8882
N-Channel Enhancement Mode MOSFET
Pin
Symbol
Description
1
G
Gate
2
S
Source
3
D
Drain
ORDERING INFORMATION
Part Number
Package
Part Marking
SPN8882T252R
SPN8882T251T
TO-252
TO-251
SPN8882
SPN8882
※
SPN8882T252RG : Tape Reel ; Pb – Free
※
SPN8882T251RG : Tube ; Pb – Free
ABSOULTE MAXIMUM RATINGS
(T
A
=25
Unless otherwise
℃
noted)
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
V
DSS
30
V
Gate –Source Voltage
V
GSS
±20
V
T
A
=25
℃
60
Continuous Drain Current
T
A
=100
℃
I
D
40
A
Pulsed Drain Current
I
DM
100
A
Continuous Drain Current
I
S
50
A
Single Pulse Drain to Source Avalanche Energy
Starting
(T
J
=25°C , V
DD
=27V , V
GS
=10V , I
AS
=28A , L=0.1mH )
E
AS
41
mJ
TO-252-2L
40
Power Dissipation
T
A
=25
℃
TO-251
P
D
55
W
Operating Junction Temperature
T
J
150
℃
Storage Temperature Range
T
STG
-55/150
℃
Thermal Resistance-Junction to Ambient
R
θ
JA
100
/W
℃
相關(guān)PDF資料 |
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| SPN8882T251T | N-Channel Enhancement Mode MOSFET |
| SPN8882T252R | N-Channel Enhancement Mode MOSFET |
| SPN9926A | N-Channel Enhancement Mode MOSFET |
| SPN9926AS8RG | N-Channel Enhancement Mode MOSFET |
| SPN9926AS8TG | N-Channel Enhancement Mode MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SPN8882_11 | 制造商:SYNC-POWER 制造商全稱:SYNC-POWER 功能描述:N-Channel Enhancement Mode MOSFET |
| SPN8882T251T | 制造商:SYNC-POWER 制造商全稱:SYNC-POWER 功能描述:N-Channel Enhancement Mode MOSFET |
| SPN8882T251TG | 制造商:SYNC-POWER 制造商全稱:SYNC-POWER 功能描述:N-Channel Enhancement Mode MOSFET |
| SPN8882T252R | 制造商:SYNC-POWER 制造商全稱:SYNC-POWER 功能描述:N-Channel Enhancement Mode MOSFET |
| SPN8882T252RG | 制造商:SYNC-POWER 制造商全稱:SYNC-POWER 功能描述:N-Channel Enhancement Mode MOSFET |
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