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參數(shù)資料
| 型號(hào)： | SPN4346 |
| 英文描述： | N-Channel Enhancement Mode MOSFET |
| 中文描述： | N溝道增強(qiáng)型MOS管 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 219K |
| 代理商： | SPN4346 |
ELECTRICAL CHARACTERISTICS
(T
A
=25
Unless oth
℃
2006/11/28
Ver.1
Page 3
SPN4346
N-Channel Enhancement Mode MOSFET
erwise noted)
Parameter
Symbol
Conditions
Min.
Typ
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
V
(BR)DSS
V
GS
=0V,I
D
=250uA
V
GS(th)
V
DS
=V
GS
,I
D
=250uA
I
GSS
V
DS
=0V,V
GS
=±12V
V
DS
=24V,V
GS
=0V
I
DSS
V
DS
=24V,V
GS
=0V
T
J
=85
℃
I
D(on)
V
DS
≥
5V,V
GS
=10V
V
GS
= 10V,I
D
=6.8A
V
GS
=4.5V,I
D
=6.0A
R
DS(on)
V
GS
=2.5V,I
D
=5.6A
gfs
V
DS
=15V,I
D
=6.2A
V
SD
I
S
=2.3A,V
GS
=0V
30
0.8
1.6
±100
1
V
nA
Zero Gate Voltage Drain Current
5
uA
On-State Drain Current
25
A
0.018
0.024
0.036
13
0.8
0.026
0.034
0.040
1.2
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
S
V
Dynamic
Total Gate Charge
Q
g
16
24
Gate-Source Charge
Q
gs
3
Gate-Drain Charge
Q
gd
V
DS
=15V,V
GS
=10V
I
D
= 2A
2.5
nC
t
d(on)
15
20
Turn-On Time
t
r
6
12
t
d(off)
10
20
Turn-Off Time
t
f
V
DD
=15V,R
L
=15
I
D
≡
1.0A,V
GEN
=10V
R
G
=6
40
80
nS
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| SPN4346S8RG | 制造商:SYNC-POWER 制造商全稱:SYNC-POWER 功能描述:N-Channel Enhancement Mode MOSFET |
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| SPN4392S8RG | 制造商:SYNC-POWER 制造商全稱:SYNC-POWER 功能描述:N-Channel Enhancement Mode MOSFET |
| SPN4392S8TG | 制造商:SYNC-POWER 制造商全稱:SYNC-POWER 功能描述:N-Channel Enhancement Mode MOSFET |
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