參數(shù)資料
型號: SPN8822
英文描述: Common-Drain Dual N-Channel Enhancement Mode MOSFET
中文描述: 常見的漏雙N溝道增強(qiáng)型MOS管
文件頁數(shù): 1/8頁
文件大小: 251K
代理商: SPN8822
Enhancement Mode MOSFET
DESCRIPTION
The SPN8822 is the Common-Drain Dual N-Channel
logic enhancement mode power field effect transistors are
produced using high cell density , DMOS trench
technology. This high density process is especially
tailored to minimize on-state resistance. These devices
are particularly suited for low voltage application ,
notebook computer power management and other battery
powered circuits where high-side switching .
2007/04/23
Ver.1
Page 1
SPN8822
Common-Drain Dual N-Channel
APPLICATIONS
z
Power Management in Note book
z
Portable Equipment
z
Battery Powered System
z
DC/DC Converter
z
Load Switch
z
DSC
z
LCD Display inverter
FEATURES
20V/8.0A,R
DS(ON)
= 24m
@V
GS
= 4.5V
20V/7.0A,R
DS(ON)
= 32m
@V
GS
= 2.5V
20V/3.0A,R
DS(ON)
= 42m
@V
GS
= 1.8V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
TSSOP – 8P package design
PIN CONFIGURATION(SOP – 8P)
PART MARKING
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SPN8822A 制造商:SYNC-POWER 制造商全稱:SYNC-POWER 功能描述:Common-Drain Dual N-Channel Enhancement Mode MOSFET
SPN8822ATS8RG 制造商:SYNC-POWER 制造商全稱:SYNC-POWER 功能描述:Common-Drain Dual N-Channel Enhancement Mode MOSFET
SPN8822ATS8TG 制造商:SYNC-POWER 制造商全稱:SYNC-POWER 功能描述:Common-Drain Dual N-Channel Enhancement Mode MOSFET
SPN8822TS8RG 制造商:SYNC-POWER 制造商全稱:SYNC-POWER 功能描述:Common-Drain Dual N-Channel Enhancement Mode MOSFET
SPN8822TS8TG 制造商:SYNC-POWER 制造商全稱:SYNC-POWER 功能描述:Common-Drain Dual N-Channel Enhancement Mode MOSFET