參數(shù)資料
型號: SPN3456ST6RG
英文描述: N-Channel Enhancement Mode MOSFET
中文描述: N溝道增強型MOS管
文件頁數(shù): 1/8頁
文件大小: 216K
代理商: SPN3456ST6RG
DESCRIPTION
The SPN3456 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
2007/03/19
Ver.1
Page 1
SPN3456
N-Channel Enhancement Mode MOSFET
APPLICATIONS
z
Power Management in Note book
z
Portable Equipment
z
Battery Powered System
z
DC/DC Converter
z
Load Switch
z
DSC
z
LCD Display inverter
FEATURES
30V/6.0A,R
DS(ON)
= 40
@V
GS
=10V
30V/5.0A,R
DS(ON)
= 50
@V
GS
=4.5V
Super high density cell design for extremely low
R
DS (ON)
Exceptional on-resistance and maximum DC
current capability
TSOP-6P package design
PIN CONFIGURATION( TSOP– 6P )
PART MARKING
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