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參數(shù)資料
| 型號(hào)： | SPD5712ATXV |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類(lèi)： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 0.075 A, 16 V, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED PACKAGE-2 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 217K |
| 代理商： | SPD5712ATXV |
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SPD5711, SPD5711A
And
SPD5712, SPD5712A
SPD5711
SPD5712
Electrical Characteristics
3/
Symbol
Min
Max
Min
Max
Units
Blocking Reverse Voltage
(IR = 10 μA, TA = 25°C, 300 – 500 μs Pulse)
VBR
70
––
20
––
VDC
Instantaneous Forward Voltage Drop
(TA = 25°C, 300 – 500 μs Pulse)
IF = 1 mADC
IF = 15 mADC
IF = 35 mADC
VF1
VF2
VF3
––
0.41
1.0
––
0.41
––
1.0
VDC
Instantaneous Forward Voltage Drop
(TA = -55 C, 300 – 500 μs Pulse)
IF = 1 mADC
IF = 15 mADC
IF = 35 mADC
VF4
VF5
VF6
––
0.55
1.0
––
0.55
––
1.0
VDC
Reverse Leakage Current
(TA = 25 C, 300 μs Minimum Pulse)
IR1
––
200
––
150
nA
Reverse Leakage Current
(TA = 100 C, VR = Rated, 300 μs Minimum Pulse)
SPD5711: Vr = 50V
SPD5712: Vr = 16V
IR2
––
200
––
150
μA
Junction Capacitance
(VR = 0 VDC, VSIG = 50 mVPK, TA = 25C, f =
1MHz)
SPD5711 and SPD5712
SPD5711A and SPD5712A
CJ1
CJ2
––
2.0
1.2
––
2.0
1.2
pF
DIMENSIONS
DIM
MIN.
MAX.
A
0.068”
0.076”
B
0.150”
0.170”
C
1.00”
1.50”
Axial Case Outline:
Note: Lead Diameter is not controlled within 0.050” of the diode body.
D
0.014”
0.022”
DIMENSIONS
DIM
MIN.
MAX.
A
0.080”
0.095”
B
0.205”
0.220”
C
0.22”
0.28”
Square Tab Surface Mount (SMS) Case Outline:
D
0.001”
---
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0008D
DOC
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