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參數(shù)資料
| 型號： | SB1560TL |
| 廠商： | SEMIKRON INTERNATIONAL |
| 元件分類： | 整流器 |
| 英文描述： | 15 A, 60 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 182K |
| 代理商： | SB1560TL |
SB1520TL..SB15100TL
by SEMIKRON
Rev. 2 – 21.01.2011
1
Axial Lead Diode
Diode
Schottky barrier rectifier
diodes
Forward Current: 15 A
Reverse Voltage: 20 to 100 V
SB1520TL..SB15100TL
Features
Max. solder temperature: 260°C
Plastic material has UL
classification 94V-0
Electrostatic discharge immunity
test IEC 1000-4-2 (C=150 pF, R=150
Ohm): voltage class 20 kV
Typical Applications*
Designed as Bypass Diodes for Solar
Panels, protection application
Mechanical Data
Plastic case: 8 x 7,5 [mm]
Weight approx.: 2 g
Terminals: plated terminals solderable
per MIL-STD-750
Mounting position: any
Standard packaging: 500 pieces per
ammo or 1000 pieces per reel
Footnotes
1) IF = - A, IR = - A, IRR = - A
2)
IF = 5 A, Tj = 25 °C
3) IF = 15 A, Tj = 25 °C
4) Valid, if leads are kept at TA at a distance
of 0 mm from case
5) Max. junction temperature Tj ≤200 °C in
bypass mode / DC forward mode
6)
Thermal resistance from junction to lead/
terminal at distance 0 mm from case
Type
Repetitive
peak
reverse
voltage
VRRM
V
Surge peak
reverse
voltage
VRSM
V
Max.
reverse
recovery
time
trr1)
ns
Max.
forward
voltage
VF2)
V
Max.
forward
voltage
VF3)
V
SB 1520TL 20
20
-
0,43
0,52
SB 1530TL 30
30
-
0,43
0,52
SB 1540TL 40
40
-
0,43
0,52
SB 1545TL 45
45
-
0,43
0,52
SB 1550TL 50
50
-
0,6
-
SB 1560TL 60
60
-
0,6
-
SB 1590TL 90
90
-
0,74
-
SB 15100TL 100
100
-
0,74
-
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
Ta = 25 °C, unless otherwise specified
IFAV
R-load, 4), Ta =50 °C
15
A
IFRM
f > 15 Hz, 4)
60
A
IFSM
half sinus-wave
Ta =25 °C
tp =10ms
350
A
tp =8.3 ms
A
i2t
Ta =25 °C
tp =10ms
613
As
tp =8.3 ms
As
Tj
Operating junction temperature
-50 ... +150
°C
Tj
DC forward (bypass) mode 5)
-50 ... +200
°C
Tstg
Storage temperature
-50 ... +175
°C
Characteristics
Symbol Conditions
min.
typ.
max.
Unit
Ta = 25 °C, unless otherwise specified
IR
Tj =25 °C, VR = VRRM
500
A
IR
Tj =100 °C, VR = VRRM
25
mA
Cj
at 1 MHz and applied reverse voltage
of 4 V
-pF
ERSM
L= 60 mH, Tj = 25 °C, inductive load
switched off
-mJ
Rthja
4)
-K/W
RthjL
6)
1.8
K/W
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