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參數(shù)資料
| 型號(hào)： | SPC6604ST6RG |
| 英文描述： | N & P Pair Enhancement Mode MOSFET |
| 中文描述： | ? |
| 文件頁(yè)數(shù)： | 3/11頁(yè) |
| 文件大小： | 273K |
| 代理商： | SPC6604ST6RG |
ELECTRICAL CHARACTERISTICS
(T
A
=25
Unless otherwise noted)
℃
2006/03/20
Ver.3
Page 3
SPC6604
N & P Pair Enhancement Mode MOSFET
Parameter
Symbol
Conditions
Min.
Typ
Max.
Unit
Static
Drain-Source Breakdown
Voltage
V
GS
=0V,I
D
= 250uA
V
(BR)DSS
V
GS
=0V,I
D
=-250uA
V
DS
=V
GS
,I
D
=250uA
V
GS(th)
V
DS
=V
GS
,I
D
=-250uA
V
DS
=0V,V
GS
=±12V
I
GSS
V
DS
=0V,V
GS
=±12V
V
DS
= 20V,V
GS
=0V
V
DS
=-20V,V
GS
=0V
V
DS
= 20V,V
GS
=0V T
J
=55
℃
V
DS
=-20V,V
GS
=0V T
J
=55
℃
V
DS
≥
4.5V,V
GS
= 10V
I
D(on)
V
DS
≤
-4.5V,V
GS
=-10V
V
GS
=4.5V,I
D
=4.0A
V
GS
=-4.5V,I
D
=-3.4A
V
GS
=2.5V,I
D
=3.4A
V
GS
=-2.5V,I
D
=-2.4A
V
GS
=1.8V,I
D
=2.8A
V
GS
=-1.8V,I
D
=-1.7A
V
GS
=1.25V,I
D
=1.0A
V
GS
=-1.25V,I
D
=-1.0A
V
DS
=5V,I
D
=-3.6A
gfs
V
DS
=-5V,I
D
=-2.8A
I
S
=1.6A,V
GS
=0V
V
SD
I
S
=-1.5A,V
GS
=0V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
20
-20
0.4
-0.35
6
-6
1.0
-0.8
±100
±100
1
-1
10
-10
Gate Threshold Voltage
V
Gate Leakage Current
nA
Zero Gate Voltage Drain
Current
I
DSS
uA
On-State Drain Current
A
0.040 0.050
0.068 0.085
0.046 0.060
0.090 0.110
0.056 0.075
0.113 0.130
0.105 0.120
0.185 0.200
10
6
0.8
-0.8
Drain-Source On-Resistance R
DS(on)
Forward Transconductance
S
1.2
-1.2
Diode Forward Voltage
V
Dynamic
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
4.8
4.8
1.0
1.0
1.0
1.0
8
10
12
13
30
18
12
15
8
8
14
16
18
23
35
25
16
20
Total Gate Charge
Q
g
Gate-Source Charge
Q
gs
Gate-Drain Charge
Q
gd
N-Channel
V
DS
=6V,V
GS
=4.5V, I
D
≡
2.8A
P-Channel
V
DS
=-6V,V
GS
=-4.5V ,I
D
≡
-2.8A
nC
t
d(on)
Turn-On Time
t
r
t
d(off)
Turn-Off Time
t
f
N-Channel
V
DD
=6V,R
L
=6
,I
D
≡
1.0A
V
GEN
=4.5V ,R
G
=6
P-Channel
V
DD
=-6V,R
L
=6
,I
D
≡
-1.0A
V
GEN
=-4.5V ,R
G
=6
nS
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