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參數(shù)資料
| 型號(hào)： | SPC6801ST6RG |
| 英文描述： | P-Channel Trench MOSFET with Schottky Diode |
| 中文描述： | P溝道溝道MOSFET與肖特基二極管 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 240K |
| 代理商： | SPC6801ST6RG |
P-Channel Trench MOSFET with Schottky Diode
DESCRIPTION
The SPC6801combines the Trench MOSFET technology
with a very low forward voltage drop Schottky barrier
rectifier in an TSOP-6P package. The Trench MOSFET is
the P-Channel enhancement mode power field effect
transistors are produced using high cell density , DMOS
trench technology. This high density process is especially
tailored to minimize on-state resistance and provide
superior switching performance. The Schottky diode is
provided to facilitate the implementation of a
bidirectional blocking switch, or for DC-DC conversion
applications.
2006/11/25
Ver.1
Page 1
SPC6801
APPLICATIONS
z
Battery Powered System
z
DC/DC Converter
z
Load Switch
z
Cell Phone
FEATURES
P-Channel
-30V/-2.8A,RDS(ON)=105m
@VGS=- 10V
-30V/-2.5A,RDS(ON)=115m
@VGS=-4.5V
-30V/-1.5A,RDS(ON)=150m
@VGS=-2.5V
Schottky
VKA (V) = 20V, IF = 1A, VF<0.5V@0.5A
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
TSOP– 6P package design
PIN CONFIGURATION( TSOP– 6P )
PART MARKING
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