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| 型號： | SP9316B-4 |
| 英文描述： | 60 AMP LATCHING POWER RELAY |
| 中文描述： | 16？位CMOS乘法DAC |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 132K |
| 代理商： | SP9316B-4 |
Corporation
SIGNAL PROCESSING EXCELLENCE
182
ABSOLUTE MAXIMUM RATINGS
(T
A
=25
°
C unless otherwise noted)
These are stress ratings only and functional operation of the device
at these or any other above those indicated in the operation
sections of the specifications below is not implied. Exposure to
absolute maximum rating conditions for extended periods of time
may affect reliability.
V
to GND .................................................................-–0.3V, +17V
Digital Input Voltage to GND ............................... -–0.3V ,V
DD
+0.3V
SPECIFICATIONS
(T
A
=25
°
C; V
DD
=+15V, V
REF
= +10V; I
O1
= AGND = GND = 0V; unipolar unless otherwise noted.)
PARAMETER
MIN.
STATIC PERFORMANCE
Resolution
Integral Non-Linearity
C-4
B-4
Differential Non-Linearity
C-4
B-4
Offset Error
Gain Error
AC PERFORMANCE CHARACTERISTICS
Propagation Delay
Current Settling Time
To 0.01% FSR (strobed)
To 0.00076% FSR (strobed)
Output Capacitance
C
O1
C
O2
C
O3
C
Glitch Energy
Multiplying Feedthrough Error
TYP.
MAX.
UNIT
CONDITIONS
16
Bits
Note 5
±
0.006
±
0.006
%FSR
%FSR
Note 7
±
0.006
±
0.006
60
0.2
%FSR
%FSR
μ
V
Note 3
Note 4
0.1
%FSR
300
ns
Note 9
Major code settling times
2.0
3.0
μ
s
μ
s
170
30
80
100
250
pF
pF
pF
pF
Digital input V
IH
Digital input V
IH
Digital input V
IL
Digital input V
IL
Note 10
nV-s
3.0
0.3
mV
P-P
mV
P-P
Note 11
Note 12
STABILITY
All Grades:
Gain Error TC
Offset
Integral Non-Linearity TC
Note 4
Note 6
±
1.0
±
4.0
±
1.0
±
1.0
±
1.0
ppm/
°
C
ppm/
°
C
ppm/
°
C
ppm/
°
C
±
0.1
Note 5
Monotonicity Guaranteed
C-4
B-4
Power Supply Rejection
LONG-TERM STABILITY
Differential Non-linearity
Offset
Gain
REFERENCE INPUT
Input Impedance
Voltage Range
SWITCHING CHARACTERISTICS
Strobe Width
Data Setup Time
Data Hold Time
14
14
Bits
Bits
%/%
±
0.0001
±
0.002
V
DD
= 14.0V to 16.0V
1
ppm/
°
C
ppm/
°
C
ppm/
°
C
±
0.5
±
1
2.5
–10
5.0
7.5
+10
K
Volts
80
80
40
60
70
20
ns
ns
ns
V
or V
to GND ................................................................
±
25V
Output Voltage (Pin 15, Pin 16) ........................... –0.3V, V
+0.3V
Power Dissipation (Any Package) to +75
°
C ........................ 450mW
Derates above 75
°
C by...................................................... 6mW/
°
C
Dice Junction Temperature ................................................. +150
°
C
Storage Temperature .......................................... -–65
°
C to +150
°
C
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