參數(shù)資料
型號: SN74BCT2411
廠商: Texas Instruments, Inc.
英文描述: 11-Bit MOS Memory Drivers(11位MOS存儲器驅動器(三態(tài)輸出))
中文描述: 11位MOS存儲驅動器(11位馬鞍山存儲器驅動器(三態(tài)輸出))
文件頁數(shù): 1/4頁
文件大?。?/td> 73K
代理商: SN74BCT2411
SN74BCT2411
11-BIT MOS MEMORY DRIVER
WITH 3-STATE OUTPUTS
SCBS254 – JUNE 1991 – REVISED NOVEMBER 1993
Copyright
1993, Texas Instruments Incorporated
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
State-of-the-Art BiCMOS Design
Significantly Reduces I
CCZ
ESD Protection Exceeds 2000 V Per
MIL-STD-883C, Method 3015; Exceeds
200 V Using Machine Model (C = 200 pF,
R = 0)
Output Ports Have Equivalent 33-
Series
Resistors, So No External Resistors Are
Required
Packaged in Plastic Small-Outline Package
description
The SN74BCT2411 is an inverting 11-bit
buffer/line driver specifically designed to drive
MOS DRAMs of up to 4 megabits. It is also suitable
for use with wide data paths or buses carrying
parity. The outputs, which are designed to source
1 mA and sink 12 mA, include 33-
series
resistors to reduce overshoot and undershoot.
The output-enable (OE1 and OE2) inputs are routed internally to a two-input AND gate with active-low inputs.
When both OE1 and OE2 are low, the Y outputs are active (high or low logic level). When either OE1 or OE2
is high, the Y outputs are in the high-impedance state.
The multiple ground pins of the SN774BCT2411 reduce switching noise for more reliable system operation.
The SN74BCT2411 is characterized for operation from 0
°
C to 70
°
C.
FUNCTION TABLE
INPUTS
OUTPUT
Y
OE1
OE2
A
L
L
L
H
L
L
H
L
X
H
X
Z
H
X
X
Z
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A1
A2
A3
A4
A5
OE1
V
CC
GND
OE2
Y5
Y4
Y3
Y2
Y1
A6
A7
A8
A9
A10
A11
GND
GND
Y11
Y10
Y9
Y8
Y7
Y6
DW PACKAGE
(TOP VIEW)
PRODUCT PREVIEW information concerns products in the formative or
design phase of development. Characteristic data and other
specifications are design goals. Texas Instruments reserves the right to
change or discontinue these products without notice.
P
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