參數(shù)資料
型號(hào): SN65HVD11Q
廠商: Texas Instruments, Inc.
英文描述: 3.3V RS 485 TRANSCEIVERS
中文描述: 3.3V的RS 485接口TRANSCEIVE恏巴
文件頁(yè)數(shù): 2/20頁(yè)
文件大小: 273K
代理商: SN65HVD11Q
SLLS505F FEBRUARY 2002 REVISED NOVEMBER 2003
www.ti.com
2
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during
storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION
SIGNALING RATE
UNIT LOADS
TA
PACKAGE
SOIC MARKING
SOIC(1)
SN65HVD10D
PDIP
25 Mbps
1/2
SN65HVD10P
VP10
10 Mbps
1/8
40 C to 85 C
SN65HVD11D
SN65HVD11P
VP11
1 Mbps
1/8
SN65HVD12D
SN65HVD12P
VP12
25 Mbps
1/2
SN75HVD10D
SN75HVD10P
VN10
10 Mbps
1/8
0 C to 70 C
SN75HVD11D
SN75HVD11P
VN11
1 Mbps
1/8
SN75HVD12D
SN75HVD12P
VN12
25 Mbps
1/2
40
°
C to 125
°
C
SN65HVD10QD
SN65HVD10QP
VP10Q
10 Mbps
1/8
SN65HVD11QD
SN65HVD11QP
VP11Q
(1)The D package is available taped and reeled. Add an R suffix to the part number (i.e., SN75HVD11DR).
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range unless otherwise noted(1) (2)
SN65HVD10, SN75HVD10
SN65HVD11, SN75HVD11
SN65HVD12, SN75HVD12
Supply voltage range, VCC
Voltage range at A or B
0.3 V to 6 V
9 V to 14 V
Input voltage range at D, DE, R or RE
Voltage input range, transient pulse, A and B, through 100
(see Figure 11)
0.5 V to VCC + 0.5 V
50 V to 50 V
Human body model(3)
A, B and GND
16 kV
Electrostatic discharge
All pins
4 kV
Charged-device model(4)
All pins Charge
1 kV
Continuous total power dissipation
See Dissipation Rating Table
170
°
C
65
°
C to 150
°
C
260
°
C
Junction temperature, TJ
Storage temperature range, Tstg
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
(1)Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)All voltage values, except differential I/O bus voltages, are with respect to network ground terminal.
(3)Tested in accordance with JEDEC Standard 22, Test Method A114-A.
(4)Tested in accordance with JEDEC Standard 22, Test Method C101.
PACKAGE DISSIPATION RATINGS
TA
25
°
C
POWER RATING
D(2)
597 mW
D(3)
990 mW
PACKAGE
DERATING FACTOR(1)
ABOVE TA = 25
°
C
4.97 mW/
°
C
8.26 mW/
°
C
10.75 mW/
°
C
TA = 70
°
C
POWER RATING
TA = 85
°
C
POWER RATING
TA = 125
°
C
POWER RATING
373 mW
298 mW
100 mW
620 mW
496 mW
165 mW
P
1290 mW
806 mW
645 mW
215 mW
(1)This is the inverse of the junction-to-ambient thermal resistance when board-mounted and with no air flow.
(2)Tested in accordance with the Low-K thermal metric definitions of EIA/JESD513.
(3)Tested in accordance with the High-K thermal metric definitions of EIA/JESD517.
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