- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385850 > SML50C15 N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:500V,Id(cont):21A,Rds(on):0.27Ω)(N溝道增強(qiáng)型,高電壓功率MOS場(chǎng)效應(yīng)管(Vdss:500V,Id(cont):21A,Rds(on):0.27Ω)) PDF資料下載
參數(shù)資料
| 型號(hào)： | SML50C15 |
| 英文描述： | N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:500V,Id(cont):21A,Rds(on):0.27Ω)(N溝道增強(qiáng)型,高電壓功率MOS場(chǎng)效應(yīng)管(Vdss:500V,Id(cont):21A,Rds(on):0.27Ω)) |
| 中文描述： | N溝道增強(qiáng)模式高壓功率MOSFET（減振鋼板基本：500V電壓，身份證（續(xù)）：21A條的Rds（on）：0.27Ω）（不適用溝道增強(qiáng)型，高電壓功率馬鞍山場(chǎng)效應(yīng)管（減振鋼板基本：500V電壓，身份證（續(xù)）：21A條的Rds（on）：0.27Ω）） |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 20K |
| 代理商： | SML50C15 |
SML50C15
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.uk11/99
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
, T
STG
T
L
I
AR
E
AR
E
AS
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate – Source Voltage
Gate – Source Voltage Transient
Total Power Dissipation @ T
case
= 25°C
Derate Linearly
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
4
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
500
15
60
±30
±40
140
2
–55 to 150
300
20
30
960
V
A
A
V
W
W/°C
°C
A
mJ
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
4) Starting T
J
= 25°C, L = 4.8mH, R
G
= 25
W
, Peak I
L
= 20A
V
DSS
I
D(cont)
R
DS(on)
0.270
W
500V
15A
Faster Switching
Lower Leakage
100% Avalanche Tested
TO–254 Hermetic Package
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
D
S
G
1
2
3
13.59 (0.535)
13.84 (0.545)
3.53 (0.139)
6.32 (0.249)
6.60 (0.260)
1.02 (0.040)
1.27 (0.050)
3
3
1
1
1
1
2
2
3.81 (0.150)
BSC
0.89 (0.035)
1.14 (0.045)
3.81 (0.150)
BSC
TO
–
254 Package Outline.
Dimensions in mm (inches)
Pin 1
–
Drain
Pin 2
–
Source
Pin 3
–
Gate
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SML50H24 | N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:500V,Id(cont):24A,Rds(on):0.190Ω)(N溝道增強(qiáng)型,高電壓功率MOS場(chǎng)效應(yīng)管(Vdss:500V,Id(cont):24A,Rds(on):0.190Ω)) |
| SML60A16 | N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:600V,Id(cont):16A,Rds(on):0.35Ω)(N溝道增強(qiáng)型,高電壓功率MOS場(chǎng)效應(yīng)管(Vdss:600V,Id(cont):16A,Rds(on):0.35Ω)) |
| SML60A18 | N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:600V,Id(cont):17.5A,Rds(on):0.32Ω)(N溝道增強(qiáng)型,高電壓功率MOS場(chǎng)效應(yīng)管(Vdss:600V,Id(cont):17.5A,Rds(on):0.32Ω)) |
| SML60H16 | N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:600V,Id(cont):15.5A,Rds(on):0.37Ω)(N溝道增強(qiáng)型,高電壓功率MOS場(chǎng)效應(yīng)管(Vdss:600V,Id(cont):15.5A,Rds(on):0.37Ω)) |
| SML60H20 | N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:600V,Id(cont):20A,Rds(on):0.27Ω)(N溝道增強(qiáng)型,高電壓功率MOS場(chǎng)效應(yīng)管(Vdss:600V,Id(cont):20A,Rds(on):0.27Ω)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SML50EUZ12B | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Enhanced Ultrafast Recovery Diode 1200 Volt, 50 Amp |
| SML50H19 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML50H24 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML50HB06 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:HIGH PERFORMANCE POWER SEMICONDUCTORS |
| SML50J44 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。