參數(shù)資料
型號： SML40H28
英文描述： N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:400V,Id(cont):28A,Rds(on):0.140Ω)(N溝道增強(qiáng)型,高電壓功率MOS場效應(yīng)管(Vdss:400V,Id(cont):28A,Rds(on):0.140Ω))
中文描述： N溝道增強(qiáng)模式高壓功率MOSFET（減振鋼板基本：為400V，ID已（續(xù)）：28A款的Rds（on）：0.140Ω）（不適用溝道增強(qiáng)型，高電壓功率馬鞍山場效應(yīng)管（減振鋼板基本：為400V，ID已（續(xù)）：28A款的Rds（on）：0.140Ω））
文件頁數(shù)： 1/2頁
文件大?。?/td> 19K
代理商： SML40H28
SML40H28
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
6/99
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
, T
STG
T
L
I
AR
E
AR
E
AS
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate – Source Voltage
Gate – Source Voltage Transient
Total Power Dissipation @ T
case
= 25°C
Derate Linearly
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
2
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
400
28
112
±30
±40
250
2.0
–55 to 150
300
28
30
1300
V
A
A
V
W
W/°C
°C
A
mJ
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting T
J
= 25°C, L = 3.32mH, R
G
= 25
, Peak I
L
= 28A
V
DSS
I
D(cont)
R
DS(on)
0.140
400V
28A
Faster Switching
Lower Leakage
TO–258 Hermetic Package
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
D
S
G
1
2
3
17.65 (0.695)
17.39 (0.685)
4.19 (0.165)
3.94 (0.155)
Dia.
1
1
1
1
1
1
1.65 (0.065)
1.39 (0.055)
Typ.
5.08 (0.200)
BSC
3.56 (0.140)
BSC
2
2
1.14 (0.707)
0.88 (0.035)
6.86 (0.270)
6.09 (0.240)
TO–258 Package Outline.
Dimensions in mm (inches)
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
相關(guān)PDF資料
PDF描述
SML50A15 N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:500V,Id(cont):14.7A,Rds(on):0.300Ω)(N溝道增強(qiáng)型,高電壓功率MOS場效應(yīng)管(Vdss:500V,Id(cont):14.7A,Rds(on):0.300Ω))
SML50A19 N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:500V,Id(cont):18.5A,Rds(on):0.240Ω)(N溝道增強(qiáng)型,高電壓功率MOS場效應(yīng)管(Vdss:500V,Id(cont):18.5A,Rds(on):0.240Ω))
SML40A26 N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:400V,Id(cont):25.5A,Rds(on):0.15Ω)(N溝道增強(qiáng)型,高電壓功率MOS場效應(yīng)管(Vdss:400V,Id(cont):25.5A,Rds(on):0.15Ω))
SML50A21 N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:500V,Id(cont):21A,Rds(on):0.22Ω)(N溝道增強(qiáng)型,高電壓功率MOS場效應(yīng)管(Vdss:500V,Id(cont):21A,Rds(on):0.22Ω))
SML50C15 N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:500V,Id(cont):21A,Rds(on):0.27Ω)(N溝道增強(qiáng)型,高電壓功率MOS場效應(yīng)管(Vdss:500V,Id(cont):21A,Rds(on):0.27Ω))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SML40J53 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
SML40J93 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
SML40L57 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
SML-410 制造商:ROHM 制造商全稱:Rohm 功能描述:Standard Type Mini-molded chip LEDs
SML-410MW 制造商:未知廠家 制造商全稱:未知廠家 功能描述:LEDs, Surface Mount
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