參數(shù)資料
型號(hào)： SMJ4C1024-10SV
廠商： Texas Instruments, Inc.
英文描述： 1048576 BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORY
中文描述： 1048576 1位動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器
文件頁數(shù)： 7/27頁
文件大小： 403K
代理商： SMJ4C1024-10SV
SMJ4C1024
1048576 BY 1-BIT
DYNAMIC RANDOM-ACCESS MEMORY
SGMS023E – DECEMBER 1988 – REVISED MARCH 1996
7
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted)
PARAMETER
TEST
’4C1024-80
MIN
’4C1024-10
MIN
’4C1024-12
MIN
’4C1024-15
MIN
UNIT
CONDITIONS
MAX
MAX
MAX
MAX
VOH
High-level
output voltage
IOH = – 5 mA
2.4
2.4
2.4
2.4
V
VOL
Low-level
output voltage
IOL = 4.2 mA
0.4
0.4
0.4
0.4
V
II
Input current
(leakage)
VCC = 5.5 V,
All other pins = 0 V to VCC
VI = 0 V to 6.5 V,
±
10
±
10
±
10
±
10
μ
A
IO
Output
current
(leakage)
VCC = 5.5 V,
CAS high
VO = 0 V to VCC,
±
10
±
10
±
10
±
10
μ
A
ICC1
Read- or
write-cycle
current
VCC = 5.5 V,
Minimum cycle
75
70
60
55
mA
ICC2
Standby
current
After one memory cycle,
RAS and CAS high,
VIH = 2.4 V
3
3
3
3
mA
ICC3
Average
refresh
current
(RAS only or
CBR)
VCC = 5.5 V,
RAS cycling,
CAS high (RAS only),
RAS low after CAS low (CBR)
Minimum cycle,
70
65
55
50
mA
ICC4
Average page
current
VCC = 5.5 V,
RAS low,
tPC = minimum,
CAS cycling
50
45
35
30
mA
capacitance over recommended ranges of supply voltage and operating free-air temperature,
f = 1 MHz (see Note 3)
PARAMETER
HL/JD/FQ
MIN
HJ
HK
SV
UNIT
MAX
MIN
MAX
MIN
MAX
MIN
MAX
Ci(A)
Ci(D)
Ci(RC)
Ci(W)
Co
NOTE 3: Capacitance is sampled only at initial design and after any major change. Samples are tested at 0 V and 25
°
C with a 1-MHz signal
applied to the pin under test. All other pins are open.
Input capacitance, address inputs
6
7
8
9
pF
Input capacitance, data input
5
5
6
7
pF
Input capacitance, strobe inputs
7
7
8
8
pF
Input capacitance, write-enable input
7
7
7
7
pF
Output capacitance
7
9
10
8
pF
switching characteristics over recommended ranges of supply voltage and operating free-air
temperature (see Figure 1)
PARAMETER
ALT.
’4C1024-80
MIN
’4C1024-10
MIN
’4C1024-12
MIN
’4C1024-15
MIN
UNIT
SYMBOL
MAX
MAX
MAX
MAX
ta(C)
ta(CA)
ta(R)
ta(CP)
Access time from CAS low
tCAC
tAA
tRAC
tCPA
20
25
30
40
ns
Access time from column address
40
45
55
70
ns
Access time from RAS low
80
100
120
150
ns
Access time from column precharge
40
40
60
75
ns
tdis(CH)
Output disable time after CAS high
(see Note 4)
NOTE 4: tdis(CH) is specified when the output is no longer driven. The output is disabled by bringing CAS high.
tOFF
20
25
30
35
ns
相關(guān)PDF資料
PDF描述
SMJ4C1024-12FQ 1048576 BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORY
SMJ4C1024-12HJ 1048576 BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORY
SMJ4C1024-12HK 1048576 BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORY
SMJ4C1024-12HL 1048576 BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORY
SMJ4C1024-12JD 1048576 BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SMJ4C1024-12FQ 制造商:TI 制造商全稱:Texas Instruments 功能描述:1048576 BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORY
SMJ4C1024-12HJ 制造商:TI 制造商全稱:Texas Instruments 功能描述:1048576 BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORY
SMJ4C1024-12HK 制造商:TI 制造商全稱:Texas Instruments 功能描述:1048576 BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORY
SMJ4C1024-12HL 制造商:TI 制造商全稱:Texas Instruments 功能描述:1048576 BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORY
SMJ4C1024-12JD 制造商:TI 制造商全稱:Texas Instruments 功能描述:1048576 BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORY
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