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參數(shù)資料
| 型號(hào)： | SMBJ85 |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | CMOS Hex Non-Inverting Buffer with 3-State Outputs 16-CDIP -55 to 125 |
| 中文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 81K |
| 代理商： | SMBJ85 |
DS19002 Rev. 11 - 2
2 of 3
SMBJ5.0(C)A - SMBJ170(C)A
Part Number
Add C For
Bi-Directional
(Note 4)
Reverse
Standoff
Voltage
Breakdown
Voltage
V
BR
@ I
T
(Note 5)
Test
Current
Max. Reverse
Leakage @
V
RWM
(Note 6)
Max. Clamping
Voltage @ I
pp
Max. Peak Pulse
Current
Ipp
Marking Code
V
RWM
(V)
Min (V)
Max (V)
I
T
(mA)
I
R
( A)
V
C
(V)
(A)
BI-
UNI-
SMBJ5.0(C)A
5.0
6.40
7.23
10
800
9.2
65.2
AE
KE
SMBJ6.0(C)A
6.0
6.67
7.67
10
800
10.3
58.3
AG
KG
SMBJ6.5(C)A
6.5
7.22
8.30
10
500
11.2
53.6
AK
KK
SMBJ7.0(C)A
7.0
7.78
8.95
10
200
12.0
50.0
AM
KM
SMBJ7.5(C)A
7.5
8.33
9.58
1.0
100
12.9
46.5
AP
KP
SMBJ8.0(C)A
8.0
8.89
10.23
1.0
50
13.6
44.1
AR
KR
SMBJ8.5(C)A
8.5
9.44
10.82
1.0
10
14.4
41.7
AT
KT
SMBJ9.0(C)A
9.0
10.00
11.50
1.0
5.0
15.4
39.0
AV
KV
SMBJ10(C)A
10.0
11.10
12.80
1.0
5.0
17.0
35.3
AX
KX
SMBJ11(C)A
11.0
12.20
14.40
1.0
5.0
18.2
33.0
AZ
KZ
SMBJ12(C)A
12.0
13.30
15.30
1.0
5.0
19.9
30.2
BE
LE
SMBJ13(C)A
13.0
14.40
16.50
1.0
5.0
21.5
27.9
BG
LG
SMBJ14(C)A
14.0
15.60
17.90
1.0
5.0
23.2
25.8
BK
LK
SMBJ15(C)A
15.0
16.70
19.20
1.0
5.0
24.4
24.0
BM
LM
SMBJ16(C)A
16.0
17.80
20.50
1.0
5.0
26.0
23.1
BP
LP
SMBJ17(C)A
17.0
18.90
21.70
1.0
5.0
27.6
21.7
BR
LR
SMBJ18(C)A
18.0
20.00
23.30
1.0
5.0
29.2
20.5
BT
LT
SMBJ20(C)A
20.0
22.20
25.50
1.0
5.0
32.4
18.5
BV
LV
SMBJ22(C)A
22.0
24.40
28.00
1.0
5.0
35.5
16.9
BX
LX
SMBJ24(C)A
24.0
26.70
30.70
1.0
5.0
38.9
15.4
BZ
LZ
SMBJ26(C)A
26.0
28.90
33.20
1.0
5.0
42.1
14.2
CE
ME
SMBJ28(C)A
28.0
31.10
35.80
1.0
5.0
45.4
13.2
CG
MG
SMBJ30(C)A
30.0
33.30
38.30
1.0
5.0
48.4
12.4
CK
MK
SMBJ33(C)A
33.0
36.70
42.20
1.0
5.0
53.3
11.3
CM
MM
SMBJ36(C)A
36.0
40.00
46.00
1.0
5.0
58.1
10.3
CP
MP
SMBJ40(C)A
40.0
44.40
51.10
1.0
5.0
64.5
9.3
CR
MR
SMBJ43(C)A
43.0
47.80
54.90
1.0
5.0
69.4
8.6
CT
MT
SMBJ45(C)A
45.0
50.00
57.50
1.0
5.0
72.7
8.3
CV
MV
SMBJ48(C)A
48.0
53.30
61.30
1.0
5.0
77.4
7.7
CX
MX
SMBJ51(C)A
51.0
56.70
65.20
1.0
5.0
82.4
7.3
CZ
MZ
SMBJ54(C)A
54.0
60.00
69.00
1.0
5.0
87.1
6.9
DE
NE
SMBJ58(C)A
58.0
64.40
74.60
1.0
5.0
93.6
6.4
DG
NG
SMBJ60(C)A
60.0
66.70
76.70
1.0
5.0
96.8
6.2
DK
NK
SMBJ64(C)A
64.0
71.10
81.80
1.0
5.0
103.0
5.8
DM
NM
SMBJ70(C)A
70.0
77.80
89.50
1.0
5.0
113.0
5.3
DP
NP
SMBJ75(C)A
75.0
83.30
95.80
1.0
5.0
121.0
4.9
DR
NR
SMBJ78(C)A
78.0
86.70
99.70
1.0
5.0
126.0
4.7
DT
NT
SMBJ85(C)A
85.0
94.40
108.20
1.0
5.0
137.0
4.4
DV
NV
SMBJ90(C)A
90.0
100.0
115.50
1.0
5.0
146.0
4.1
DX
NX
SMBJ100(C)A
100.0
111.0
128.00
1.0
5.0
162.0
3.7
DZ
NZ
SMBJ110(C)A
110.0
122.0
140.00
1.0
5.0
177.0
3.4
EE
PE
SMBJ120(C)A
120.0
133.0
153.00
1.0
5.0
193.0
3.1
EG
PG
SMBJ130(C)A
130.0
144.0
165.50
1.0
5.0
209.0
2.9
EK
PK
SMBJ150(C)A
150.0
167.0
192.50
1.0
5.0
243.0
2.5
EM
PM
SMBJ160(C)A
160.0
178.0
205.00
1.0
5.0
259.0
2.3
EP
PP
SMBJ170(C)A
170.0
189.0
217.50
1.0
5.0
275.0
2.2
ER
PR
Notes:
4. Suffix C denotes Bi-directional device.
5. V
BR
measured with I
T
current pulse = 300 s
6. For Bi-Directional devices havingV
RWM
of 10V and under, the I
R
is doubled.
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| SMBJ78 | UNI- AMD BI-DIRECTIONAL SURFACE MOUNT |
| SMBJ60 | UNI- AMD BI-DIRECTIONAL SURFACE MOUNT |
| SMBJ60A | UNI- AMD BI-DIRECTIONAL SURFACE MOUNT |
| SMBJ40 | UNI- AMD BI-DIRECTIONAL SURFACE MOUNT |
| SMBJ40A | UNI- AMD BI-DIRECTIONAL SURFACE MOUNT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SMBJ85/1 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 85V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ85/2 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 85V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ85/52 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 85V 10% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ85/55 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 85V 10% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ85/5B | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 85V 10% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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