參數(shù)資料
型號： SMBJ3V3/52
廠商： VISHAY SEMICONDUCTORS
元件分類： TVS二極管 - 瞬態(tài)電壓抑制
英文描述： 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
封裝： ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN
文件頁數(shù)： 1/4頁
文件大小： 101K
代理商： SMBJ3V3/52
Vishay General Semiconductor
SMBJ3V3
New Product
Document Number 88940
08-Sep-06
www.vishay.com
1
Surface Mount TRANSZORB Transient Voltage Suppressors
FEATURES
Unidirectional polarity only
Peak pulse power: 600 W (10/1000 s)
Excellent clamping capability
Very fast response time
Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
Solder Dip 260 °C, 40 seconds
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
specifically for protecting 3.3 V supplied sensitive
equipment against transient overvoltages.
MECHANICAL DATA
Case: DO-214AA (SMBJ)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
DO-214AA (SMBJ)
MAJOR RATINGS AND CHARACTERISTICS
V(BR)
3.3 V
PPPM
600 W
IFSM
60 A
Tj max.
175 °C
Note:
(1) Non-repetitive current pulse, per Fig. 1
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak pulse power dissipation (1,2)
PPPM
600
W
Peak pulse current with a 10/1000
μs waveform (see Fig. 1)
IPPM
50
A
Peak pulse current with a 8/20 waveform (see Fig. 1)
IPPM
200
A
Non repetitive peak forward surge current 8.3 ms single half sine-wave(2)
IFSM
60
A
Power dissipation on infinite heatsink, TL = 75 °C
PM(AV)
5W
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE
TYPE
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
V(BR) AT IT
MAXIMUM
REVERSE
LEAKAGE
CURRENT
IR AT VWM
MAXIMUM
CLAMPING
VOLTAGE
VC AT IPPM
MAXIMUM
CLAMPING
VOLTAGE
VC AT IPPM
TYPICAL
TEMP.
COEFFICIENT
OF V(BR)
TYPICAL
JUNCTION
CAPACITANCE
CJ AT 0 V,
MIN
MAX
10/1000 s
8/20 s
1 MHz
V
mA
A
V
VA
(%/°C)
pF
SMBJ3V3
KC
4.1
1.0
200
3.3
7.3
50
10.3
200
- 5.3
5200
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SMBJ3V3-E3/52 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 3.3V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMBJ3V3-E3/55 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 3.3V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMBJ3V3-E3/5B 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 3.3V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMBJ3V3HE3/52 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 3.3V Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMBJ3V3HE3/5B 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 3.3V Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
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